Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1813 Features Very small-sized package. Adoption of FBET process. High DC current gain (hFE=500 to 1200). Low collector-to-emitter saturation voltage 0.3V). (VCE(sat) High VEBO (VEBO 15V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -30 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -15 V Collector current IC -150 mA Collector current (pulse) ICP -300 mA Base current IB -30 mA Collector dissipation PC 200 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol IcBO VCB = -20V , IE = 0 -0.1 ìA Emitter cutoff current IEBO VEB = -10V , IC = 0 -0.1 ìA DC current Gain hFE VCE = -5V , IC = -1mA Gain bandwidth product fT Common base output capacitance Cob Testconditons Min 500 Typ 800 1200 VCE = -10V , IC = -10mA 210 MHz VCB = -10V , f = 1MHz 2.6 pF Collector-to-emitter saturation voltage VCE(sat) IC = -50mA , IB =-1mA -0.15 -0.3 mV Base-to-emitter saturation voltage VBE(sat) -0.78 -1.1 V Collector-to-base breakdown voltage IC = -50mA , IB =-1mA V(BR)CBO IC = -10ìA , IE = 0 -30 V Collector-to-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -25 V Emitter-to-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -15 V Marking Marking KS www.kexin.com.cn 1