Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1118 Features Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -20 V Collector-emitter voltage VCEO -15 V Emitter-base voltage VEBO -5 V Collector current IC -0.7 A Collector current (pulse) ICP -1.5 A mW Collector dissipation PC 500 Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SB1118 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = -15V , IE = 0 Emitter cutoff current IEBO VCB = -4V , IE = 0 DC current Gain hFE Gain bandwidth product fT Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VCE = -2V , IC = -50mA 140 VCE = -2V , IC = -500mA 60 Typ Max Unit -0.1 ìA -0.1 ìA 560 VCE = -10V , IC = -50mA 250 IC = -5mA , IB = -0.5mA -15 -35 IC = -100mA , IB = -10mA -60 -120 -0.8 -1.2 VBE(sat) IC = -100mA , IB = -10mA MHz V V Collector-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -20 V Collector-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -15 V Emitter-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -5 Output capacitance Cob VCB = -10V , f = 1MHz hFE Classification BA Marking 2 Min Rank S T U hFE 140 280 200 400 280 560 www.kexin.com.cn V 13 pF