KEXIN 2SB1118

Transistors
SMD Type
PNP Epitaxial Planar Silicon Transistors
2SB1118
Features
Low collector-to-emitter saturation voltage.
Very small size making it easy to provide highdensity,
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-20
V
Collector-emitter voltage
VCEO
-15
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-0.7
A
Collector current (pulse)
ICP
-1.5
A
mW
Collector dissipation
PC
500
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
SMD Type
2SB1118
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cutoff current
ICBO
VCB = -15V , IE = 0
Emitter cutoff current
IEBO
VCB = -4V , IE = 0
DC current Gain
hFE
Gain bandwidth product
fT
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VCE = -2V , IC = -50mA
140
VCE = -2V , IC = -500mA
60
Typ
Max
Unit
-0.1
ìA
-0.1
ìA
560
VCE = -10V , IC = -50mA
250
IC = -5mA , IB = -0.5mA
-15
-35
IC = -100mA , IB = -10mA
-60
-120
-0.8
-1.2
VBE(sat) IC = -100mA , IB = -10mA
MHz
V
V
Collector-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
-20
V
Collector-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
-15
V
Emitter-base breakdown voltage
V(BR)EBO IE = -10ìA , IC = 0
-5
Output capacitance
Cob
VCB = -10V , f = 1MHz
hFE Classification
BA
Marking
2
Min
Rank
S
T
U
hFE
140 280
200 400
280 560
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V
13
pF