Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4027 TO-252 +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 0.127 max 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 +0.28 1.50 -0.1 Fast switohing time 3 .8 0 +0.15 5.55 -0.15 Adoption of MBIT process +0.25 2.65 -0.1 +0.2 9.70 -0.2 High voltage and large current capcity +0.15 0.50 -0.15 Features 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 160 V Emitter to base voltage VEBO 6 V Collector current (DC) IC 1.5 A Collector current (Pulse) Icp 2.5 A 1 W 15 W Total Power dissipation Ta = 25 PC TC = 25 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SC4027 Electrical Characteristics Ta = 25 Max Unit collector cutoff current Parameter Symbol ICBO VCB=120V,IE=0 1.0 ìA emitter cutoff current IEBO VEB=4V,IC=0 1.0 ìA DC current Gain hFE Gain-Bandwidth Product Output Capacitance Testconditons VCE=5V,IC=100mA 100 VCE=5V,IC=10mA 80 fT VCE=10V,IC=50mA Typ 400 120 MHz cob VCB=10V,f=1MHz 12 C-E Saturation Voltage VCE(sat) IC=50mA,IB=50mA 0.13 0.45 V B-E Saturation Voltage VBE(sat) IC=50mA,IB=50mA 0.85 1.2 V C-B Breakdown Voltage V(BR)CBO IC=10ìA,IE=0 180 V C-E Breakdown Voltage V(BR)CEO IC=1mA,RBE= 160 V E-B Breakdown Voltage V(BR)EBO IE=10ìA,IC=0 6 V Turn-ON Time ton Storage Time tstg Turn-OFF Time toff 60 see specified Test Circuit Switching Time Test Cirouit hFE Classification 2 Min Marking R S T hFE 100 to 120 140 to 280 200 to 400 www.kexin.com.cn pF ìs 1.2 ìs 80 ìs