Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4399 Features High power gain : PG=25dB typ (f=100MHz). applied sets to be made small and slim. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current IC 30 mA mW Collector dissipation PC 150 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 10V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB = 4V, IC=0 0.1 ìA DC current gain hFE VCE = 6V , IC = 1mA 60 200 Gain bandwidth product 270 fT VCE = 6V , IC = 1mA Reverse transfer capacitance Cre VCB = 6V, f = 1MHz 0.9 1.2 pF Base-collector time constant rbb'Cc VCB = 6V, IC= 1mA, f = 31.9MHz 12 20 ps Power gain PG VCB = 6V, IC= 1mA, f = 100MHz 25 dB Noise figure NF VCB = 6V, IC= 1mA, f = 100MHz 3.0 dB 320 MHz hFE Classification F Marking Rank 3 4 5 hFE 60 120 90 180 135 270 www.kexin.com.cn 1