Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1669 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High power gain : MAG=11dB typ (f=0.9GHz) 1 0.55 High cutoff frequency : fT=3.0GHz typ. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 Small noise figure: NF=2.0dB typ (f=0.9GHz) 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -20 V Collector-emitter voltage VCEO -15 V Emitter-base voltage VEBO -3 V Collector current IC -50 mA Collector dissipation PC 250 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol IcBO VCB = -15V , IE = 0 -0.1 ìA Emitter cutoff current IEBO VEB = -2V , IC = 0 -0.1 ìA DC current Gain hFE VCE = -10V , IC = -5mA 15 fT VCE = -10V , IC = -5mA 1.5 Cob VCB = -10V , f = 1MHz Cre VCB = -10V , f = 1MHz Gain bandwidth product Output Capacitance Reverse transfer capacitance Testconditons |S21e|2 VCE=-10V,IC=-5mA,f=0.9GHz Forward Transfer Gain Maximum Available Power Gain Noise Figure Min Typ 3.0 1.0 0.7 5.0 MHz 1.5 pF pF dB MAG VCE=-10V,IC=-5mA,f=0.9GHz 11 dB NF VCE=-10V,IC=-3mA,f=0.9GHz 2.0 dB Marking Marking DB www.kexin.com.cn 1