Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SC4543 Features High transition frequency fT Small collector output capacitance cob Wide current range. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 110 V Collector-emitter voltage VCER * 100 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 3.5 V Peak collector current ICP 300 mA Collector current IC 150 mA Collector power dissipation PC 1.0 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * REB=1.2KÙ Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICEO VCE = 35 V, IB = 0 Min Typ Max Unit 10 ìA Collector-base voltage VCBO IC = 100 ìA, IE = 0 110 V Collector-emitter voltage VCER IC = 500 ìA, RBE = 470Ù 100 V Collector-emitter voltage VCEO IC = 1 mA, IB = 0 50 V Emitter-base voltage VEBO IE = 100 ìA, IC = 0 3.5 V VCE = 5 V, IC = 100 mA 20 ? Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance hFE VCE(sat) IC = 150 mA, IB = 15 mA 0.5 V fT1 VCB = 10 V, IE = -10 mA, f = 200 MHz 300 MHz fT2 VCB = 10 V, IE = -110 mA, f = 200 MHz 350 MHz Cob VCB = 30 V, IE = 0, f = 1 MHz 3 pF * REB=1.2KÙ Marking Marking 1F www.kexin.com.cn 1