KEXIN 2SC5232

Transistors
IC
SMD Type
Silicon NPN Epitaxial
2SC5232
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
@IC = 10 mA/IB = 0.5 mA
1
Large collector current: IC = 500 mA (max).
0.55
Low saturation voltage: VCE (sat) (1) = 15 mV (typ.)
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Base current
IB
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to +125
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1
Transistors
IC
SMD Type
2SC5232
Electrical Characteristics Ta = 25
Max
Unit
Collector cut-off current
Parameter
Symbol
ICBO
VCB = 15 V, IE = 0
0.1
ìA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
ìA
DC current gain
hFE
VCE = 2 V, IC = 10 mA
Collector-emitter saturation voltage
VCE (sat)
Testconditons
Transition frequency
fT
Typ
300
1000
IC = 10 mA, IB = 0.5 mA
15
30
IC = 200 mA, IB = 10 mA
110
250
0.87
1.2
VBE (sat) IC = 200 mA, IB = 10 mA
Base-emitter saturation voltage
VCE = 2 V, IC = 10 mA
80
V
V
130
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
4.2
pF
Collector-emitter on resistance
Ron
IB = 1 mA, Vin = 1 Vrms, f = 1 kHz
0.9
Ù
Turn-on time
ton
85
ns
Storage time
tstg
170
ns
40
ns
Fall time
tf
Duty cycle 2%,IB1=-IB2=5 Ma
hFE Classification
F
Marking
2
Min
Rank
A
B
hFE
300 600
500 1000
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