Transistors IC SMD Type Silicon NPN Epitaxial 2SC3326 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). Low on resistance: RON = 1 0.55 High emitter-base voltage: VEBO = 25 V (min). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (typ.) (IB = 5 mA). +0.05 0.1-0.01 +0.1 0.97-0.1 High DC current gain: hFE = 200 1200. 0-0.1 +0.1 0.38-0.1 Small package. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 25 V Collector current IC 300 mA Base current IB 60 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Tstg -55 to +125 Storage temperature range www.kexin.com.cn 1 Transistors IC SMD Type 2SC3326 Electrical Characteristics Ta = 25 Parameter Symbol Collector cut-off current ICBO VCB = 50 V, IE = 0 Emitter cut-off current IEBO VEB = 25 V, IC = 0 DC current gain hFE VCE = 2 V, IC = 4 mA VCE (sat) IC = 30 mA, IB = 3 mA Collector-emitter saturation voltage Min Typ 200 Max Unit 0.1 ìA 0.1 ìA 1200 0.042 0.1 V Base-emitter voltage VBE VCE = 2 V, IC = 4 mA 0.61 V Transition frequency fT VCE = 6 V, IC = 4 mA 30 MHz VCB = 10 V, IE = 0, f = 1 MHz 4.8 Collector output capacitance Cob Switchingtime Turn-on time ton 160 ns tstg 500 ns tf 130 ns Storage time Fall time hFE Classification CC Marking 2 Testconditons Rank A B hFE 200 700 350 120 www.kexin.com.cn 7 pF