Transistors IC SMD Type Silicon NPN Epitaxial 2SC4213 Features High emitter-base voltage: VEBO = 25 V (min). High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). Low on resistance: RON = 1Ù (typ.) (IB = 5 mA). High DC current gain: hFE = 200 1200. Small package. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 25 V Collector current IC 300 mA Base current IB 60 mA mW Collector power dissipation PC 100 Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Max Unit Collector cut-off current Parameter Symbol ICBO VCB = 50 V, IE = 0 0.1 ìA Emitter cut-off current IEBO VEB = 25 V, IC = 0 0.1 ìA hFE VCE = 2 V, IC = 4 mA DC current gain Collector-emitter saturation voltage Testconditons VCE (sat) IC = 30 A, IB = 3 mA Base-emitter voltage Transition frequency Min Typ 200 1200 0.042 VBE VCE = 2 V, IC = 4 mA fT VCE = 6 V, IC = 4 mA 30 VCB = 10 V, IE = 0, f = 1 MHz 4.8 0.1 0.61 V V MHz 7 pF Collector output capacitance Cob Turn-on time ton 160 ns Storage time tstg 500 ns 130 ns Fall time tf Duty cycle 2% hFE Classification Marking AA AB hFE 200 700 350 1200 www.kexin.com.cn 1