KEXIN 2SC4213

Transistors
IC
SMD Type
Silicon NPN Epitaxial
2SC4213
Features
High emitter-base voltage: VEBO = 25 V (min).
High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA).
Low on resistance: RON = 1Ù (typ.) (IB = 5 mA).
High DC current gain: hFE = 200 1200.
Small package.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
25
V
Collector current
IC
300
mA
Base current
IB
60
mA
mW
Collector power dissipation
PC
100
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Max
Unit
Collector cut-off current
Parameter
Symbol
ICBO
VCB = 50 V, IE = 0
0.1
ìA
Emitter cut-off current
IEBO
VEB = 25 V, IC = 0
0.1
ìA
hFE
VCE = 2 V, IC = 4 mA
DC current gain
Collector-emitter saturation voltage
Testconditons
VCE (sat) IC = 30 A, IB = 3 mA
Base-emitter voltage
Transition frequency
Min
Typ
200
1200
0.042
VBE
VCE = 2 V, IC = 4 mA
fT
VCE = 6 V, IC = 4 mA
30
VCB = 10 V, IE = 0, f = 1 MHz
4.8
0.1
0.61
V
V
MHz
7
pF
Collector output capacitance
Cob
Turn-on time
ton
160
ns
Storage time
tstg
500
ns
130
ns
Fall time
tf
Duty cycle
2%
hFE Classification
Marking
AA
AB
hFE
200 700
350 1200
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