Transistors SMD Type Silicon NPN Triple Diffusion Planar Type Darlington 2SD1611 TO-252 +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.25 2.65 -0.1 High collector-base voltage (Emitter open) VCBO +0.28 1.50 -0.1 +0.2 9.70 -0.2 High forward current transfer ratio hFE +0.15 0.50 -0.15 Features 1 Base 2 Collector 3 Emitter Internal Connection Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 500 V Collector-emitter voltage (Base open) VCEO 400 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 6 A Peak collector current ICP 10 A 40 A 1.3 W Collector power dissipation PC Ta = 25 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SD1611 Electrical Characteristics Ta = 25 Parameter Testconditons IE = 0.1 A, IC = 0 Emitter-base voltage (Collector open) VEBO Collector-emitter sustaining voltage* VCEO(SUS) IC = 2 A, L = 10 mH Collector-base cutoff current (Emitter open) ICBO VCB = 350 V, IE = 0 Forward current transfer ratio hFE VCE = 2 V, IC = 2 A Collector-emitter saturation voltage VCE(sat) IC = 3 A, IB = 0.06 A Base-emitter saturation voltage VBE(sat) IC = 3 A, IB = 0.06 A Transition frequency *. VCEO(SUS) Test circuit 2 Symbol www.kexin.com.cn fT VCE = 10 V, IC = 1 A, f = 1 MHz Min Typ Max Unit 5 V 400 V 100 ìA 1.5 V 500 2.5 15 V MHz