Transistors SMD Type Silicon NPN Epitaxial 2SD2115S TO-252 Features +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low frequency power amplifier. 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO 150 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 5 V Collector current IC 2 A Peak collector current ICP 2.5 A Collector power dissipation PC 18 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC = 1 mA, IE = 0 150 V Collector to emitter breakdown voltage V(BR)CEO IC = 10 mA, RBE = 60 V Emitter to base breakdown voltage V(BR)EBO IE = 1 mA, IC = 0 5 Collector cutoff current DC current transfer ratio ICBO VCB = 100 V, IE = 0 hFE VCE = 5 V,IC = 1.5 A V 10 ìA 150 Collector to emitter saturation voltage VCE(sat) IC = 1.5 A,IB = 0.05 A 0.8 V Base to emitter saturation voltage VBE(sat) IC = 1.5 A,IB = 0.05 A 1.3 V 0.6 ìs Fall time tf IC = 1.5 A,IB = -IB2 =50 mA www.kexin.com.cn 1