KEXIN 2SD2414

Transistors
SMD Type
Silicon NPN Triple Diffused Type
2SD2414
1 .2 7 -0+ 0.1.1
TO-263
Features
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
5 .2 8 -0+ 0.2.2
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
+0.1
5.08-0.1
1 5 .2 5 -0+ 0.2.2
0.1max
+0.1
1.27-0.1
2 .5 4 -0+ 0.2.2
8 .7 -0+ 0.2.2
5 .6 0
Low Saturation Voltage:VCE(sat)=0.5V(Max.)(at IC=4A)
+0.2
0.4-0.2
1 : Base
2 : Collector
3 : Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
7
A
Base current
IB
1
A
1.5
W
40
W
Collector power dissipation
PC
TC=25
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +125
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Transistors
SMD Type
2SD2414
Electrical Characteristics Ta = 25
Max
Unit
Collector cut-off current
Parameter
ICBO
VCB = 100 V, IE = 0
5
ìA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
5
mA
Collector-emitter sustaining voltage
VCEO
IC = 50 mA, IB=0
80
VCE = 1 V, IC = 1 A
100
VCE = 1 V, IC = 4 A
30
DC current gain
hFE
Testconditons
Min
Typ
V
320
Collector-emitter saturation voltage
VCE (sat) IC = 4A, IB = 0.4A
0.25
0.5
V
Base-emitter saturation voltage
VBE (sat) IC =4A, IB = 0.4A
0.9
1.4
V
Transition frequency
fT
VCE=4V,IC=1A
10
MHz
VCB=10V,IE=0,f=1MHz
200
pF
Collector output capacitance
Cob
Storage time Turn-on Time
ton
0.4
Storage time Storage Time
tstg
2.5
tf
0.5
Storage time Fall Time
2
Symbol
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