MOSFET SMD Type MOS Fied Effect Transistor 2SJ179 SOT-89 Unit: mm +0.1 4.50-0.1 Features +0.1 1.50-0.1 +0.1 1.80-0.1 MAX.@VGS=-4.0V,ID=-0.5A RDS(on)=1.0 MAX.@VGS=-10V,ID=-0.5A 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 2.60 +0.1 -0.1 Bidircetional Zener Diode for protection is incorporated betweent +0.1 0.44-0.1 +0.1 0.80-0.1 RDS(on)=1.5 +0.1 2.50-0.1 Has low on-stage resistance +0.1 4.00-0.1 Directly driven by Ics having a 5V poer supply. Gate and Source Inductive loads can be driven without protective circuit thanks to 1 Gate 1. Source Base 1. +0.1 3.00-0.1 0.40 +0.1 -0.1 the and Source. 2 Drain Collector 2.2. Drain 3 Source Emiitter 3.3. Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VGS=0 VDSS -30 V VDS=0 VGSS 20 V ID 1.5 A Gate to source voltage Drain current (DC) 3.0 Drain current(pulse) * ID Power dissipation PD 2.0 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 ms; d A W 50%. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain cut-off current IDSS VDS=-30V,VGS=0 Gate leakage current IGSS VGS= Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance -1.0 VDS=-10V,ID=-0.5A 0.4 RDS(on) Max Unit -10 A 1.0 VGS(off) VDS=-10V,ID=-1mA Yfs Typ 20V,VDS=0 VGS=-4.0V,ID=-0.5A VGS=-10V,ID=-0.5A Input capacitance Min Ciss VDS=-10V,VGS=0,f=1Mhz -2.2 -3.0 A V s 0.8 1.5 0.4 1.0 210 pF Output capacitance Coss 130 pF Reverse transfer capacitance Crss 3 pF Turn-on delay time td(on) 35 ns Rise time tr Turn-off delay time td(off) Fall time tf VGS(on)=-10V,RG=10 0.5A RL=50 ,VDD=-25V,ID=- 70 ns 380 ns 200 ns Marking Marking PA www.kexin.com.cn 1