Transistors IC SMD Type Small Switching 2SK3050 TO-252 +0.15 6.50-0.15 +0.2 5.30-0.2 Low on-resistance. Unit: mm +0.1 2.30-0.1 +0.15 1.50-0.15 Features +0.8 0.50-0.7 0.127 max Easily designed drive circuits. Easy to use in parallel. 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 +0.1 0.80-0.1 +0.25 2.65-0.1 30V. +0.28 1.50-0.1 Gate-source voltage (VGSS) guaranteed to be +0.2 9.70-0.2 Wide SOA (safe operating area). +0.15 0.50-0.15 Fast switching speed. 1. Gate +0.15 4.60-0.15 Silicon N-channel MOSFET 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS 30 V ID 2 A Drain Current (pulse) * IDP 6 A Body to drain diode reverse drain current IDR 2 A Body to drain diode reverse drain current(pulse) * IDRP 6 A W Drain Current(DC) Total power dissipation (Tc=25 ) PD 20 Channel Temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10ìs,Dduty cycle 1%. Electrical Characteristics Ta = 25 Parameter Gate to source leak current Drain to source breakdown voltage Symbol IGSS Testconditons Typ VGS= 30V, VDS=0V V(BR)DSS ID=1mA, VGS=0V Zero gate voltage drain current IDSS VDS=600V, VGS=0V Gate threshold voltage VGSth VDS=10V, ID=1mA Static Drain to source on stateresistance Min 100 600 |yfs| ID=1A, VDS=10V 2.0 Input capacitance Ciss Output capacitance Reverse transfer capacitance Turn-on delay time 4.0 4.4 nA A V 5.5 1.0 S VDS=10V 280 pF Coss VGS=0V 48 pF Crss f=1MHz 16 pF td(on) VGS=10V 12 ns tr RL=300 17 ns td(off) RG=10 29 ns tf ID=1A, VDD=300V 105 ns Reverse recovery time trr IDR=2A, VGS=0V 460 ns Reverse recovery charge Qrr di/dt=100A/ 2.0 Rise time Turn-off delay time Fall time s 0.5 Unit V 100 RDS(on) ID=1A, VGS=10V Forward transfer admittance Max C www.kexin.com.cn 1