MOSFET SMD Type MOS Field Effect Transistor 2SK3296 TO-263 +0.1 1.27-0.1 Features 4.5 V drive available Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Built-in gate protection diode Surface mount device available +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V) +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 Low gate charge 5.60 MAX. (VGS = 10 V, ID = 18 A) +0.2 8.7-0.2 RDS(on)1 = 12m Unit: mm 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 20 Gate to source voltage VGSS 20 V ID 35 A 140 A Drain current Idp * Power dissipation TA=25 PD 1.5 V W 40 TC=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW Unit 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS VDS=20V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.0 VDS=10V,ID=18A 9.0 Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Yfs RDS(on) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Typ Max Unit 10 A 10 A 2.5 V S VGS=10V,ID=18A 8.5 12 m VGS=4.5V,ID=18A 12 19 m VDS=10V,VGS=0,f=1MHZ 1300 pF 570 pF 300 pF Turn-on delay time ton 70 ns Rise time tr 1220 ns Turn-off delay time toff 100 ns Fall time tf 180 ns ID=18A,VGS(on)=10V,RG=10 ,VDD=10V www.kexin.com.cn 1