Transistors IC SMD Type Silicon N-channel Power MOSFET 2SK3636 TO-263 Avalanche energy capacity guaranteed: EAS 20 mJ +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 No secondary breakdown +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 8 .7 -0+ 0.2.2 High-speed switching: tf = 50 ns 5 .6 0 30 V guaranteed 2 .5 4 -0+ 0.2.2 Gate-source surrender voltage VGSS = 1 .2 7 -0+ 0.1.1 Features Unit: mm +0.2 0.4-0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 800 V Gate-source surrender voltage VGSS 30 V Drain current ID 3 A Peak drain current IDP 6 A Avalanche energy capability EAS 20 Power dissipation Ta = 25 PD Power dissipation 2 mJ W 35 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors IC SMD Type 2SK3636 Electrical Characteristics Ta = 25 Parameter Gate-drain surrender voltage Testconditons VDSS ID = 1 mA, VGS = 0 Min Drain-source cutoff current IDSS VDS = 640 V, VGS = 0 IGSS VGS = Gate threshold voltage Vth VDS = 25 V, ID = 1 mA 2.0 Yfs VDS = 25 V, ID = 2 mA 1.5 Forward transfer admittance * Typ Unit V 30 V, VDS = 0 RDS(on) VGS = 10 V, ID = 2 mA Max 800 Gate-source cutoff currentt Drain-source on resistance * 100 ìA 1 ìA 5.0 V 4.0 Ù -1.6 V 2.4 3.2 V VDSF IDR = 3 A, VGS = 0 Short-circuit forward transfer capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz 730 pF Short-circuit output capacitance Coss 90 pF Reverse transfer capacitance Crss 40 pF Turn-on delay time Diode forward voltage * td(on) 35 ns Rise time tr 60 ns Fall time tf 50 ns Turn-off delay time td(off) VDD = 200 V, ID = 2 A, RL = 100 Ù,VGS = 10 V 160 ns Thermal resistance (ch-c) Rth(ch-c) 3.6 /W Thermal resistance (ch-a) Rth(ch-a) 62.5 /W * Pulse measurement 2 Symbol www.kexin.com.cn