KEXIN 2SK3731

Transistors
IC
SMD Type
N-channel enhancement mode MOSFET
2SK3731
TO-263
1 .2 7 -0+ 0.1.1
Unit: mm
Features
Low on-resistance, low Qg
+0.1
1.27-0.1
+0.2
4.57-0.2
5 .2 8 -0+ 0.2.2
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
+0.1
5.08-0.1
1 5 .2 5 -0+ 0.2.2
0.1max
+0.1
1.27-0.1
2 .5 4 -0+ 0.2.2
8 .7 -0+ 0.2.2
For high-speed switching
5 .6 0
High avalanche resistance
+0.2
0.4-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
VDSS
230
V
Gate-source surrender voltage
VGSS
30
V
Drain current
ID
20
A
Peak drain current
IDP
80
A
Avalanche energy capability *
EAS
668
mJ
Power dissipation
PD
50
W
1.4
Power dissipation Ta = 25
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
*: L = 2.79 mH, IL = 20 A, VDD = 50 V, 1 pulse, Ta = 25
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1
Transistors
IC
SMD Type
2SK3731
Electrical Characteristics Ta = 25
Parameter
Testconditons
Min
ID = 1 mA, VGS = 0
230
Vth
VDS = 10 V, ID = 1 mA
2.0
Drain-source cutoff current
IDSS
VDS = 184 V, VGS = 0
Gate-source cutoff current
IGSS
Drain-source surrender voltage
Gate threshold voltage
VDSS
VGS =
RDS(on)
VGS = 10 V, ID = 10 A
Forward transfer admittance
|YfS|
VDS = 10 V, ID = 10 A
Short-circuit forward transfer capacitance
Ciss
Short-circuit output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Turn-off delay time
Fall time
Diode foward voltage
Tr
VDS = 25 V, VGS = 0, f = 1 MHz
VDD
100 V, ID = 10 A
RL = 10Ù, VGS = 10 V
td(off)
Unit
V
4.0
65
7
Max
V
10
ìA
1
ìA
82
mÙ
14
S
360
pF
394
pF
49
pF
31
ns
27
ns
214
ns
47
tf
VDSF
Typ
30 V, VDS = 0
Drain-source ON resistance
Rise time
IDR = 20 A, VGS = 0
ns
?1.5
V
Reverse recovery time
trr
L = 230 ìH, VDD = 100 V
142
Reverse recovery charge
Qrr
IDR = 10 A, di/dt = 100 A/ìs
668
nC
Gate charge load
Qg
43
nC
Gate-source charge
Qgs
6.6
nC
Gate-drain charge
2
Symbol
Qgd
VDD = 100 V, ID = 10 A,VGS = 10 V
ns
16
nC
Thermal resistance (ch-c)
Rth(ch-c)
2.5
/W
Thermal resistance (ch-a)
Rth(ch-a)
89.2
/W
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