Transistors IC SMD Type Silicon P-channel power MOSFET 2SJ0582 TO-252 Features Avalanche energy capability guaranteed +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 High-speed switching Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.15 0.50-0.15 +0.2 9.70-0.2 No secondary breakdown 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to Source Voltage VDSS -200 V Gate to Source Voltage VGSS 20 V ID 2 A Drain Current Unit Peak Drain Current IDP 4 Avalanche Energy Capability * EAS 10 mJ Power Dissipation TC = 25 PD 10 W W Power Dissipation PD 1 Channel Temperature Tch 150 Storage Temperature Tstg -55 to +150 A * L = 5 mH, IL = 2 A, 1 pulse www.kexin.com.cn 1 Transistors IC SMD Type 2SJ0582 Electrical Characteristics Ta = 25 Parameter Symbol Drain Cut-off Current IDSS VDS = -160 V, VGS = 0 Gate Leakage Current IGSS VGS = Drain-Source Surrender Voltage VDSS ID = -1 mA, VGS = 0 Gate Threshold Voltage Vth Drain to Source On-state Resistance Min VDS = -25 V, ID = -1 mA Yfs VDS = -25 V, ID = -1.0 A IDR = -2.0 A, VGS = 0 Diode Forward Voltage VDF Ciss Output Capacitance Coss VDS = -20 V, VGS = 0, f = 1 MHz Max Unit -10 A 10 -200 -4 1.5 1 A V -2 RDS(on) VGS = -10 V, ID = -1.0 A Input Capacitance Typ 20 V, VDS = 0 Forward Transfer Admittance V 2.0 1.7 S 1.4 V 400 pF 55 pF Feedback Capacitance Crss 25 pF Turn-on Delay Time td(on) 12 ns VDD = 100 V, ID = -1.0 A, RL = 100 15 ns VGS = -10 V 25 ns 50 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Thermal resistance (ch-c) Rth(ch-c) 12.5 /W Thermal resistance (ch-a) Rth(ch-a) 125 /W Marking Marking 2 Testconditons J0582 www.kexin.com.cn