Transistors SMD Type NPN Medium Power Transistor BCP54; BCP55; BCP56 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 High collector current +0.1 3.00-0.1 1.3 W power dissipation. +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 1 base 3 2 +0.1 0.70-0.1 2.9 4.6 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage Symbol BCP54 BCP55 VCBO BCP56 collector-emitter voltage BCP54 BCP55 VCEO BCP56 Rating Unit 45 V 60 V 100 V 45 V 60 V 80 V emitter-base voltage VEBO 5 V collector current (DC) IC 1 A peak collector current ICM 1.5 A peak base current IBM 0.2 A total power dissipation Ptot 1.33 W storage temperature Tstg -65 to +150 junction temperature Tj 150 operating ambient temperature Tamb -65 to +150 thermal resistance from junction to ambient Rth j-a 94 K/W thermal resistance from junction to soldering point Rth j-s 13 K/W www.kexin.com.cn 1 Transistors SMD Type BCP54; BCP55; BCP56 Electrical Characteristics Ta = 25 Parameter Symbol collector cut-off current ICBO emitter cut-off current IEBO DC current gain hFE Testconditons Min Typ Max Unit 100 nA IE = 0 A; VCB = 30 V; Tj = 150 10 ìA IC = 0 A; VEB = 5 V 100 nA IE = 0 A; VCB = 30 V IC = 5 mA; VCE = 2 V 63 IC =150 mA; VCE = 2 V 63 IC = 500 mA; VCE = 2 V 40 VCE = 2 V; IC = 150 mA 63 250 DC current gain BCP54-10; BCP55-10; BCP56-10 hFE BCP54-16; BCP55-16; BCP56-16 collector-emitter saturation voltage 100 250 VCEsat IC = 0.5 A; IB = 50 mA 500 mV base-emitter voltage VBE IC = 0.5 A; VCE = 2 V 1 V transition frequency fT DC current gain ratio of the complementary pairs 2 160 www.kexin.com.cn IC = 10 mA; VCE = 5 V; f = 100 MHz |IC| = 150 mA;|VCE| = 2 V 130 MHz 1.6