KEXIN BCP53

Transistors
SMD Type
PNP Medium Power Transistors
BCP51,BCP52,BCP53
SOT-223
Unit: mm
0.1max
+0.05
0.90-0.05
Features
High collector current
+0.1
3.00-0.1
+0.15
1.65-0.15
+0.2
3.50-0.2
+0.2
6.50-0.2
+0.2
0.90-0.2
+0.3
7.00-0.3
1.3 W power dissipation.
4
1 base
1
3
2
+0.1
0.70-0.1
2.9
2 collector
3 emitter
4.6
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage (open emitter)
Symbol
BCP51
BCP52
VCBO
BCP53
Collector-emitter voltage(open base)
BCP51
BCP52
VCEO
BCP53
Emitter-base voltage( open collector)
VEBO
Rating
Unit
-45
V
-60
V
-100
V
-45
V
-60
V
-80
V
-5
V
Collector current
IC
-1
A
Peak collector current
ICM
-1.5
A
Peak base current
IBM
-0.2
A
Total power dissipation Tamb
Ptot
1.3
W
Tstg
-65 to +150
25
Storage temperature
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient
Rth(j-a)
95
K/W
Thermal resistance from junction to solder point
Rth(j-s)
14
K/W
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1
Transistors
SMD Type
BCP51,BCP52,BCP53
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Symbol
ICBO
IEBO
hFE
DC current gain BCP51-10,BCP52-10,BCP53-10
hFE
BCP51-16,BCP52-16,BCP53-16
Collector-emitter saturation voltage
Base to emitter voltage
Transition frequency
2
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Max
Unit
VCB = -30 V, IE = 0
Testconditons
Min
Typ
-100
nA
VCB = -30 V, IE = 0; Tj = 125
-10
ìA
-100
nA
VEB = -5 V, IC = 0
IC = -5 mA; VCE = -2 V
63
IC = -150 mA; VCE = -2 V
63
IC = -500 mA; VCE = -2 V
40
IC = -150 mA; VCE = -2 V
63
160
IC = -150 mA; VCE = -2 V
100
250
250
VCE(sat) IC = -500 mA; IB = -50 mA
VBE
fT
IC = -500 mA; VCE = -2 V
IC = -10 mA; VCE = -5 V; f = 100 MHz
115
-0.5
V
-1
V
MHz