Transistors SMD Type PNP Medium Power Transistors BCP51,BCP52,BCP53 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features High collector current +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 1.3 W power dissipation. 4 1 base 1 3 2 +0.1 0.70-0.1 2.9 2 collector 3 emitter 4.6 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage (open emitter) Symbol BCP51 BCP52 VCBO BCP53 Collector-emitter voltage(open base) BCP51 BCP52 VCEO BCP53 Emitter-base voltage( open collector) VEBO Rating Unit -45 V -60 V -100 V -45 V -60 V -80 V -5 V Collector current IC -1 A Peak collector current ICM -1.5 A Peak base current IBM -0.2 A Total power dissipation Tamb Ptot 1.3 W Tstg -65 to +150 25 Storage temperature Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient Rth(j-a) 95 K/W Thermal resistance from junction to solder point Rth(j-s) 14 K/W www.kexin.com.cn 1 Transistors SMD Type BCP51,BCP52,BCP53 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Symbol ICBO IEBO hFE DC current gain BCP51-10,BCP52-10,BCP53-10 hFE BCP51-16,BCP52-16,BCP53-16 Collector-emitter saturation voltage Base to emitter voltage Transition frequency 2 www.kexin.com.cn Max Unit VCB = -30 V, IE = 0 Testconditons Min Typ -100 nA VCB = -30 V, IE = 0; Tj = 125 -10 ìA -100 nA VEB = -5 V, IC = 0 IC = -5 mA; VCE = -2 V 63 IC = -150 mA; VCE = -2 V 63 IC = -500 mA; VCE = -2 V 40 IC = -150 mA; VCE = -2 V 63 160 IC = -150 mA; VCE = -2 V 100 250 250 VCE(sat) IC = -500 mA; IB = -50 mA VBE fT IC = -500 mA; VCE = -2 V IC = -10 mA; VCE = -5 V; f = 100 MHz 115 -0.5 V -1 V MHz