Transistors SMD Type PNP Medium Power Transistors BSR30,BSR31,BSR33 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 Features +0.1 2.50-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 Low voltage (max. 80 V). +0.1 4.00-0.1 High current (max. 1 A) 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Symbol BSR30,BSR31 VCBO BSR33 Collector-emitter voltage BSR30,BSR31 Rating Unit -70 V -90 V -60 V -80 V VEBO -5 V Collector current IC -1 A Peak collector current ICM -2 A Peak base current IBM -200 mA W VCEO BSR33 Emitter-base voltage Total power dissipation Ptot 1.35 Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient Rth(j-a) 93 K/W Thermal resistance from junction to soldering point Rth(j-s) 13 K/W www.kexin.com.cn 1 Transistors SMD Type BSR30,BSR31,BSR33 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons IE = 0; VCB = -60 V Typ Max Unit -100 nA Collector cutoff current ICBO IE = 0; VCB = -60 V; Tj = 150 -50 ìA Emitter cutoff current IEBO IC = 0; VEB = -5 V -100 nA hFE IC = -100 mA; VCE = -5 V; DC current gain * BSR30 BSR31; BSR33 DC current gain * BSR30 DC current gain * hFE BSR30 IC = -100 mA; VCE = -5 V hFE IC = -500 mA; VCE = -5 V; BSR31,BSR33 collector-emitter saturation voltage * VBEsat Transition frequency fT * Pulse test: tp = 300 ìs; ä 120 100 300 30 IC = -150 mA; IB = -15 mA -0.25 V IC = -500 mA; IB = -50 mA -0.5 V IC = -150 mA; IB = -15 mA -1 V IC = -500 mA; IB = -50 mA -1.2 V IC = -50 mA; VCE = -10 V; f = 100 MHz 0.01. hFE Classification TYPE BSR30 BSR31 BSR33 Marking BR1 BR2 BR4 www.kexin.com.cn 40 50 VCEsat base-emitter saturation voltage * 10 30 BSR31,BSR33 2 Min 100 MHz