SMD Type Transistors

Transistors
SMD Type
NPN
Transistors
BCX54,BCX55,BCX56
(KCX54 ,KCX55,KCX56)
Features
1.70
0.1
High current (max. 1 A).
Low voltage (max. 80 V).
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Symbol
Rating
VCBO
Unit
45
V
BCX55
60
V
BCX56
100
V
BCX54
45
V
BCX55
60
V
BCX56
80
V
BCX54
VCEO
VEBO
5
V
Collector current
IC
1
A
Peak collector current
ICM
1.5
A
Peak base current
IBM
0.2
A
Total power dissipation
Ptot
1.3
W
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
T amb
-65 to +150
Thermal resistance from junction to ambient
Rth(j-a)
94
K/W
Thermal resistance from junction to solder point
Rth(j-s)
14
K/W
Emitter-base voltage
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1
Transistors
SMD Type
BCX54,BCX55,BCX56
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
DC current gain
hFE
DC current gain BCX54-10,BCX55-10,BCX56-10
hFE
BCX54-16,BCX55-16,BCX56-16
VBE
Transition frequency
fT
hFE
DC current gain ratio of the
complementary pairs
hFE
hFE Classification
2
TYPE
BCX54
BCX54-10
BCX54-16
Marking
BA
BC
BD
TYPE
BCX55
BCX55-10
BCX55-16
Marking
BE
BG
BM
TYPE
BCX56
BCX56-10
BCX56-16
Marking
BH
BK
BL
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Min
Typ
Max
Unit
VCB = 30 V, IE = 0
100
nA
VCB = 30 V, IE = 0; Tj = 125
10
uA
VEB = 5 V, IC = 0
100
nA
IC = 5 mA; VCE = 2 V
63
IC = 150 mA; VCE = 2 V
63
IC = 500 mA; VCE = 2 V
40
IC = 150 mA; VCE = 2 V
63
160
IC = 150 mA; VCE = 2 V
100
250
250
VCE(sat) IC = 500 mA; IB = 50 mA
Collector-emitter saturation voltage
Base to emitter voltage
■ Typical Characterisitics
Testconditions
IC = 500 mA; VCE = 2 V
IC = 10 mA; VCE = 5 V; f = 100 MHz
IC
= 150 mA;
VCE
= 2V
0.5
V
1
V
130
1.3
MHz
1.6