KEXIN KFS20

Transistors
SMD Type
NPN Medium Frequency Transistor
KFS20(BFS20)
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Low current (max. 25 mA)
0.4
3
Features
1
Very low feedback capacitance (typ. 350 fF).
0.55
Low voltage (max. 20 V)
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
30
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
4
V
IC
25
mA
ICM
25
mA
Collector current
Peak collector current
power dissipation
PD
250
mW
Rth j-a
500
K/W
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
Thermal resistance from junction to ambient *
* Transistor mounted on an FR4 printed-circuit board.
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Symbol
Testconditons
ICBO
IE = 0; VCB = 20 V
Min
Typ
Max
Unit
100
nA
ICBO
IE = 0; VCB = 20 V; Tj = 100
10
A
Emitter cutoff current
IEBO
IC = 0; VEB = 4V
100
nA
DC current gain
hFE
IC = 7mA; VCE = 10 V
900
mV
Base to emitter voltage
VBE
IC = 7 mA; VCE = 10V
Collector capacitance
CC
IE = ie = 0; VCB = 10 V; f = 1 MHz
Freedback capacitance
Cre
IC=0,VCB=10V,f=1MHz
Transition frequency
fT
IC =5mA; VCE =10 V; f = 100 MHz
40
85
740
275
1
pF
350
pF
450
MHz
Marking
Marking
G1
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