Transistors IC SMD Type PNP Medium Frequency Transistor BF824W Features Low current (max. 25 mA). Low voltage (max. 30 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -4 V Collector current IC -25 mA Peak collector current ICM -25 mA Total power dissipation * Ptot 200 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 625 K/W * Transistor mounted on an FR4 printed-circuit board. Electrical Characteristics Ta = 25 Parameter Collector cutoff current Symbol ICBO Emitter cutoff current IEBO DC current gain hFE Max Unit IE = 0; VCB = -30 V Testconditons Min -50 nA IE = 0; VCB = -30 V; Tj = 150 -10 ìA -100 nA IC = 0; VEB = -4 V IC = -1 mA; VCE = -10 V 25 IC = -4 mA; VCE = -10 V 25 Typ Base to emitter voltage VBE IC = -4 mA; VCE = -10 V -900 mV Feedback capacitance Crb IC = 0; VCE = -10 V; f = 1 MHz 0.3 pF Transition frequency fT VCE = -10 V; f = 100 MHz; IC = -1 mA IC = -4 mA IC = -8 mA 250 400 390 MHz Marking Marking F8 www.kexin.com.cn 1