KEXIN BF824W

Transistors
IC
SMD Type
PNP Medium Frequency Transistor
BF824W
Features
Low current (max. 25 mA).
Low voltage (max. 30 V).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-30
V
Collector-emitter voltage
VCEO
-30
V
Emitter-base voltage
VEBO
-4
V
Collector current
IC
-25
mA
Peak collector current
ICM
-25
mA
Total power dissipation *
Ptot
200
mW
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
625
K/W
* Transistor mounted on an FR4 printed-circuit board.
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Symbol
ICBO
Emitter cutoff current
IEBO
DC current gain
hFE
Max
Unit
IE = 0; VCB = -30 V
Testconditons
Min
-50
nA
IE = 0; VCB = -30 V; Tj = 150
-10
ìA
-100
nA
IC = 0; VEB = -4 V
IC = -1 mA; VCE = -10 V
25
IC = -4 mA; VCE = -10 V
25
Typ
Base to emitter voltage
VBE
IC = -4 mA; VCE = -10 V
-900
mV
Feedback capacitance
Crb
IC = 0; VCE = -10 V; f = 1 MHz
0.3
pF
Transition frequency
fT
VCE = -10 V; f = 100 MHz;
IC = -1 mA
IC = -4 mA
IC = -8 mA
250
400
390
MHz
Marking
Marking
F8
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