KEXIN KHC21025

Transistors
IC
SMD Type
Complementary enhancement
mode MOS transistors
KHC21025
Features
High-speed switching
No secondary breakdown
Very low on-resistance.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
N-Channel
P-Channel
Drain to Source Voltage
VDSS
30
-30
Gate to Source Voltage
VGS
Drain Current
Ts
80
peak drain current *1
3.5
IDM
14
Tamb = 25
;*3
-2.3
A
-10
A
2
Ptot
1.3
; *5
storage temperature
W
1
Tamb = 25 ; * 4
Tamb = 25
V
2
Ts = 80 ; *2
total power dissipation
V
20
20
ID
Unit
-65 to 150
Tstg
150
operating junction temperature
Tj
source current (DC)
IS
1.5
-1.25
A
ISM
6
-5
A
Ts
80
peak pulsed source current *1
thermal resistance from junction to soldering point
Rth j-s
35
K/W
*1 Pulse width and duty cycle limited by maximum junction temperature.
*2 Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 2 W at the same time.
*3 Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an Rth a-tp
(ambient to tie-point) of 27.5 K/W.
*4 Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an Rth a-tp
(ambient to tie-point) of 90 K/W.
*5 Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on printed-circuit
board with an Rth a-tp (ambient to tie-point) of 90 K/W.
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1
Transistors
IC
SMD Type
KHC21025
Electrical Characteristics Ta = 25
Parameter
drain-source breakdown voltage
Symbol
V(BR)DSS
gate-source threshold voltage
VGSth
drain-source leakage current
IDSS
gate leakage current
IGSS
Testconditons
IDon
input capacitance
Ciss
output capacitance
Coss
reverse transfer capacitance
Crss
total gate charge
gate-source charge
gate-drain charge
turn-on time
turn-off time
source-drain diode forward voltage
reverse recovery time
2
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QG
QGS
QGD
ton
toff
VSD
trr
Unit
30
V
P-Ch
-30
V
VGS = VDS; ID = 1 mA
N-Ch
1
2.8
V
VGS = VDS; ID = -1 mA
P-Ch
-1
-2.8
V
VGS = 0; VDS = 24 V
N-Ch
100
nA
VGS = 0; VDS = -24 V
P-Ch
-100
VGS =
20 V; VDS = 0
VGS = -10 V; VDS = -1 V
100
nA
P-Ch
100
nA
P-Ch
3.5
VGS = -4.5 V; ID = - 0.5 A
A
2
A
-2.3
A
-1
N-Ch
VGS = 10 V; ID = 2.2 A
nA
N-Ch
N-Ch
VGS = 4.5 V; VDS = 5 V
P-Ch
VGS = -10 V; ID = -1 A
forward transfer admittance
Max
N-Ch
VGS = 4.5 V; ID = 1 A
RDSon
Typ
VGS = 0; ID = 10 mA
VGS = -4.5 V; VDS = -5 V
drain-source on-state resistance
Min
VGS = 0; ID = -10 mA
VGS = 10 V; VDS = 1 V
on-state drain current
Type
A
0.11
0.2
0.08
0.1
0.33
0.4
0.22
0.25
VDS = 20 V; ID = 2.2 A
N-Ch
2
4.5
VDS = -20 V; ID = -1 A
P-Ch
1
2
S
S
VGS = 0; VDS = 20 V; f = 1 MHz
N-Ch
250
pF
VGS = 0; VDS = -20 V; f = 1 MHz
P-Ch
250
pF
VGS = 0; VDS = 20 V; f = 1 MHz
N-Ch
140
pF
VGS = 0; VDS = -20 V; f = 1 MHz
P-Ch
140
pF
VGS = 0; VDS = 20 V; f = 1 MHz
N-Ch
50
pF
VGS = 0; VDS = -20 V; f = 1 MHz
P-Ch
50
VGS = 10 V; VDS = 15 V; ID = 2.3 A
N-Ch
10
30
pF
VGS = -10 V; VDS = -15 V; ID = -2.3 A
P-Ch
10
25
VGS = 10 V; VDS = 15 V; ID = 2.3 A
N-Ch
1
nC
nC
nC
nC
VGS = -10 V; VDS = -15 V; ID = -2.3 A
P-Ch
1
VGS = 10 V; VDS = 15 V; ID = 2.3 A
N-Ch
2.5
nC
VGS = -10 V; VDS = -15 V; ID = -2.3 A
P-Ch
3
nC
VGS =0 to 10 V; VDD=20V;ID=1A;RL=20
N-Ch
15
40
ns
VGS=0 to -10V;VDD=-20V;ID=-1 A;RL=20
P-Ch
20
80
ns
VGS=10 to 0 V;VDD=20V;ID=1A;RL=20
N-Ch
25
140
ns
50
VGS=-10 to 0 V;VDD=-20V;ID=-1 A;RL=20
P-Ch
140
ns
VGD = 0; IS = 1.25 A
N-Ch
1.2
V
VGD = 0; IS = -1.25 A
P-Ch
-1.6
V
IS = 1.25 A; di/dt = 100 A/
N-Ch
35
100
ns
P-Ch
150
200
ns
IS = -1.25 A; di/dt = 100 A/
s
s