Transistors SMD Type N-Channel 20-V (D-S) MOSFET KI2314EDS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ESD Protected: 3000 V 1 0.55 TrenchFET Power MOSFET +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )*1 TA = 25 ID TA = 70 5secs Steady State 20 4.9 3.77 3.9 3 IDM 15 L = 0.1 mH IAS 15 Single Avalanche Energy L = 0.1 mH EAS 11.25 Continuous Source Current (Diode Conduction)*1 Power Dissipation *1 TA = 25 TA = 70 Operating Junction and Storage Temperature Range A 1 IS PD V 12 Avalanche Current*2 Pulsed Drain Current Unit 1.25 0.75 0.8 0.48 W -55 to 150 TJ, Tstg *1 Surface Mounted on 1"X 1" FR4 Board. *2 Pulse width limited by maximum junction temperature. Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient * Symbol t 5 sec RthJA Steady-State Maximum Junction-to-Foot (Drain) Steady-State RthJF Typical Maximum 75 100 120 166 40 50 Unit /W * Surface Mounted on 1"X 1" FR4 Board. www.kexin.com.cn 1 Transistors SMD Type KI2314EDS Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Typ Max A 20 V VGS(th) VDS = VGS, ID =250 A 0.45 V IDSS ID(on) Drain Source On State Resistance* rDS(on) VDS = 0 V, VGS = 4.5 V 1.5 VDS =16V, VGS = 0 V 1 VDS = 16V, VGS = 0 V, TJ = 70 75 VDS 15 10 V, VGS = 4.5 V A VGS = 4.5 V, ID =5.0A 0.027 0.033 VGS = 2.5V, ID = 4.5A 0.033 0.040 VGS = 1.8V, ID =4.0A 0.042 0.051 Forward Transconductanceb gfs VDS = 15V, ID = 5.0 A 40 VSD IS = 1.0 A, VGS = 0 V 0.8 1.2 Total Gate Charge Qg 11.0 14.0 VDS = 10 V, VGS = 4.5V, ID = 5.0 A S Qgs Gate-Drain Charge Qgd 2.1 Turn-On Delay Time td(on) 0.53 0.8 tr Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test :Pulse width 300 s,duty cycle 2% Marking Marking C4 www.kexin.com.cn VDD=10V,RL=10 ,ID=1.0A,VGEN=4.5V,RG=6 IF = 1.0 A, di/dt = 100 A/ s * V nC Gate-Source Charge td(off) A A Schottky Diode Forward Voltage* Turn-Off Delay Time Unit VGS = 0 V, ID = 250 On-State Drain Current* Rise Time 2 Min V(BR)DSS IGSS Zero Gate Voltage Drain Current Testconditons 1.5 1.4 2.2 13.5 20 5.9 9 13 25 ns ns