Transistors IC SMD Type P-Channel 1.8-V (G-S) MOSFET KI1407DL SOT-363 1.3 Unit: mm +0.1 -0.1 0.65 0.525 Features +0.15 2.3-0.15 +0.1 1.25-0.1 TrenchFET Power MOSFETs 0.36 1.8 V Rated +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 secs Steady State Unit Drain-source voltage VDS -12 V Gate-source voltage VGS 8 V Continuous drain current (TJ = 150 )* TA=25 -TA=85 ID Pulsed drain current IDM - 1.6 - 1.2 - 1.8 - 1.4 A -5 A Continuous source current (diode conduction) * IS -0.8 -0.8 A TA=25 TA=85 PD 0.625 0.400 0.568 0.295 W Power dissipation * -- Operating junction and storage temperature range -55 to +150 Tj,Tstg * Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient* Symbol t 5 sec RthJA Steady State Maximum Junction-to-Foot (Drain) Steady State RthJF Typical Maximum 165 200 180 220 105 130 Unit /W * Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 Transistors IC SMD Type KI1407DL Electrical Characteristics Ta = 25 Parameter Symbol Gate threshold voltage VGS(th) Gate-body leakage IGSS Zero gate voltage drain current IDSS On-state drain current ID(on) Drain-source on-state resistance rDS(on) Testconditons 8V Max Unit -1 V 100 nA VDS = -12 V, VGS = 0 V -1 VDS =-20 V, VGS = 0 V, TJ = 85 -5 VDS =-5 V, VGS = -4.5 V -2 0.105 0.130 VGS = -2.5V, ID =-1.5 A 0.140 0.170 VGS = -1.8V, ID = -0.8A 0.185 0.225 gfs VDS = -10 V, ID = -1.8 A Diode forward voltage VSD IS = -0.8 A, VGS = 0 V -0.77 -1.1 5.5 7.0 VDS =-6V ,VGS = -4.5 V , ID= -1.8A 0.95 Total gate charge * Qg Gate-source charge * Qgs Gate-drain charge * Qgd 4.3 * Pulse test: PW 300 ìs duty cycle Marking Marking OC www.kexin.com.cn 2%. nC 8 12 tr 33 50 32 50 29 45 20 40 trr V 1.10 VDD = -6V , RL = 10 , ID =-1A , VGEN =-4.5V , RG = 6 tf Source-Drain Reverse Recovery Time S td(on) td(off) Turn-off time A A VGS = -4.5 V, ID = -1.8 A Forward transconductance Turn-on time 2 Typ -0.45 VDS = VGS, ID = -250 A VDS = 0 V, VGS = Min IF = -0.8 A, di/dt = 100 A/ s ns