IC
IC
SMD Type
HEXFET Power MOSFET
KRF7494
Features
High frequency DC-DC converters
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
ID
5.2
Continuous Drain Current, VGS @ 10V,TA = 100
ID
3.7
Pulsed Drain Current*1
IDM
42
PD
3
Continuous Drain Current, VGS @ 10V,Ta = 25
Power Dissipation Ta = 25
*1
Linear Derating Factor
Unit
A
W
0.02
W/
Gate-to-Source Voltage
VGS
20
V
Drain-Source Voltage
VDS
150
V
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 to + 150
Junction-to-Ambient
R JA
50
/W
20
/W
Junction-to-Drain Lead
R
JL
Single Pulse Avalanche Energy*3
EAS
370
mJ
Avalanche Current *2
IAR
3.1
A
*1 Pulse width
400 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
*3 Starting TJ = 25 , L = 77mH,RG = 25 , IAS = 3.1A.
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IC
IC
SMD Type
KRF7494
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Testconditons
V(BR)DSS
VGS = 0V, ID = 250 A
Min
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
VGS = 10V, ID = 3.1A*1
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 A
2.5
gfs
VDS = 50V, ID = 5.2A*1
12
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
0.15
ID = 1mA,Reference to 25
35
1.0
250
VGS = 20V
100
VGS = -20V
-100
ID = 3.1A
36
VDS = 75V
7.5
Gate-to-Drain ("Miller") Charge
Qgd
VGS = 10V,*1
13
Turn-On Delay Time
td(on)
VDD = 100V
15
tr
ID = 3.1A
13
td(off)
RG =6.5
36
tf
VGS=10V
14
Input Capacitance
Ciss
VGS = 0V
1750
Output Capacitance
Coss
VDS = 25V
220
Reverse Transfer Capacitance
Crss
ƒ= 1.0MHz
100
Output Capacitance
Coss
VGS = 0V, VDS = 1.0V, f = 1.0MHz
870
Coss
VGS = 0V, VDS = 120V, f= 1.0MHz
120
VGS = 0V, VDS = 0V to 120V
170
Output Capacitance
Continuous Source Current
Coss eff.
Body Diode)
V
VDS = 120V, VGS = 0V, TJ = 125
Qg
Effective Output Capacitance
m
4.5
VDS = 120V, VGS = 0V
Qgs
Fall Time
V/
44
S
Total Gate Charge
Turn-Off Delay Time
Unit
V
Gate-to-Source Charge
Rise Time
Max
150
Breakdown Voltage Temp. Coefficient
TJ
Typ
A
nA
54
nC
ns
pF
IS
2.7
ISM
42
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
V
TJ = 25 , IF = 3.1A.VDD=25V
55
ns
140
nC
Reverse RecoveryCharge
Qrr
di/dt = 100A/
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
*1 Pulse width
400µs; duty cycle
2%.
*2 Repetitive rating; pulse width limited bymax
2
1.3
TJ = 25 , IS = 3.1A, VGS = 0V*1
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