IC
IC
SMD Type
HEXFET Power MOSFET
KRF7105
Features
Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
N-Channel
P-Channel
Continuous Drain Current VGS @ 10V Ta = 25
ID
3.5
-2.3
Continuous Drain Current VGS @ 10V Ta = 70
ID
2.8
-1.8
Pulsed Drain Current *1
IDM
14
-10
Power Dissipation
2.0
PD
@Tc= 25
Peak Diode Recovery dv/dt *2
dv/dt
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
Maximum Junction-to-Ambient*3
3.0
V/ ns
V
-55 to + 150
TJ, TSTG
R
W/
-3.0
20
A
W
0.016
Linear Derating Factor
Unit
62.5
JA
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD
P-Channel ISD
3.5A, di/dt
-2.3A, di/dt
90A/
90A/
*3 Surface mounted on FR-4 board, t
s, VDD
s, VDD
V(BR)DSS, TJ
V(BR)DSS, TJ
150
150
10sec.
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IC
IC
SMD Type
KRF7105
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Testconditons
Symbol
25
VGS = 0V, ID = -250 A
P-Ch
-20
V(BR)DSS/
ID = 1mA,Reference to 25
N-Ch
0.030
TJ
ID = -1mA,Reference to 25
P-Ch
-0.015
V(BR)DSS
RDS(on)
VGS = 4.5V, ID = 0.5A*1
VGS = -10V, ID = -1.0A*1
VGS = -4.5V, ID = -0.50A*1
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
gfs
IDSS
IGSS
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain ("Miller") Charge
Qgd
Turn-On Delay Time
td(on)
Turn-Off Delay Time
Fall Time
Internal Drain Inductace
Internal Source Inductance
2
VGS(th)
Total Gate Charge
Rise Time
tr
td(off)
LD
LS
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Max
V/
0.083 0.10
N-Ch
P-Ch
0.14
0.16
0.16
0.25
0.30
0.40
N-Ch
1.0
3.0
VDS = VGS, ID = -250 A
P-Ch
-1.0
-3.0
VDS =15V, ID = 3.5A*1
N-Ch
4.3
VDS = -15V, ID = -3.5A*1
P-Ch
3.1
VDS = 20V, VGS = 0V
N-Ch
2.0
VDS = -20V, VGS = 0V
P-Ch
-2.0
N-Ch
25
VDS = -20V, VGS = 0V, TJ = 55
P-Ch
-25
20V
N-Ch
100
P-Ch
100
N-Channel
N-Ch
9.4
27
ID =2.3A,VDS = 12.5V,VGS =10V *1
P-Ch
10
25
N-Ch
1.7
P-Channel
P-Ch
1.9
ID = -2.3A,VDS = -12.5V,VGS = -10V *1
N-Ch
3.1
P-Ch
2.8
N-Channel
N-Ch
7.0
VDD = 25V,ID = 1.0A,RG = 6.0
P-Ch
12
RD = 25
N-Ch
9.0
P-Channel
P-Ch
13
VDD = -25V,ID = -1.0A,RG = 6.0
N-Ch
45
P-Ch
45
N-Ch
25
*1
RD = 25 1*1
P-Ch
37
N-Ch
4.0
Between lead,6mm(0.25in.)from
P-Ch
4.0
packing and center of die contact
N-Ch
6.0
P-Ch
6.0
N-Channel
N-Ch
330
VGS = 0V,VDS = 15V,f = 1.0MHz *1
P-Ch
290
N-Ch
250
P-Channel
P-Ch
210
VGS = 0V,VDS = -15V,f = 1.0MHz *1
N-Ch
61
P-Ch
67
V
S
VDS = 20V, VGS = 0V, TJ = 55
VGS =
Unit
V
VDS = VGS, ID = 250 A
tf
Input Capacitance
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Typ
N-Ch
VGS = 10V, ID = 1.0A*1
Static Drain-to-Source On-Resistance
Min
VGS = 0V, ID = 250 A
A
nA
nC
ns
nH
pF
IC
IC
SMD Type
KRF7105
Electrical Characteristics Ta = 25
Parameter
Continuous Source Current
Pulsed Source Current
Body Diode)
Body Diode) *2
ISM
VSD
Reverse Recovery Time
trr
Reverse RecoveryCharge
Qrr
Forward Turn-On Time
ton
300 s; duty cycle
Min
IS
Diode Forward Voltage
*1 Pulse width
Testconditons
Symbol
Typ
Max
N-Ch
2.0
P-Ch
-2.0
N-Ch
14
P-Ch
-9.2
TJ = 25 , IS = 1.3A, VGS = 0V*1
N-Ch
1.2
TJ = 25 , IS = -1.3A, VGS = 0V*1
P-Ch
-1.2
N-Channel
N-Ch
36
54
TJ = 25 , IF =1.3A,di/dt = 100A/
P-Ch
69
100
s*1
P-Channel
TJ=25 ,IF=-1.3A,di/dt=-100A/
s*1
Intrinsic turn-on time is neglegible
(turn-on is dominated by LS+LD)
N-Ch
41
75
P-Ch
90
180
Unit
A
V
ns
nC
N-Ch
P-Ch
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
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