IC
IC
SMD Type
HEXFET Power MOSFET
KRF7313
Features
Generation V Technology
Ultra Low On-Resistance
Dual N-Channel Mosfet
Surface Mount
Fully Avalanche Rated
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Drain- Source Voltage
Parameter
VDS
30
Gate-to-Source Voltage
VGS
Continuous Drain Current,TC = 70
ID
6.5
*3
ID
30
IDM
2.5
Pulsed Drain Current
Maximum Power Dissipation Ta = 25 *3
Maximum Power Dissipation Ta = 70
PD
V
20
*3
Continuous Drain Current, Ta = 25
Unit
2
A
W
1.3
*3
Single Pulse Avalanche Energy *4
EAS
82
mJ
Avalanche Current
IAR
4
A
Repetitive Avalanche Energy
EAR
0.2
mJ
Peak Diode Recovery dv/dt*2
dv/dt
5.8
V/ns
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 to + 150
Maximum Junction-to-Ambient *3
R JA
62.5
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD
4.0A, di/dt
74A/
s, VDD V(BR)DSS,TJ
*3 Surface mounted on FR-4 board, t
*4 Starting TJ=25
150
10sec.
,L=10mH,RG=25 , IAS=4.0A
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1
IC
IC
SMD Type
KRF7313
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Testconditons
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
30
0.023 0.029
VGS = 4.5V, ID = 4.7A*1
0.032 0.046
VDS = 15V, ID = 5.8A*1
V/
1.0
V
14
S
VDS = 24V, VGS = 0V
1.0
VDS = 24V, VGS = 0V, TJ = 55
25
VGS = 20V
100
VGS = -20V
-100
Total Gate Charge
Qg
ID = 5.8A
22
33
Gate-to-Source Charge
Qgs
VDS = 15V
2.6
3.9
Gate-to-Drain ("Miller") Charge
Qgd
VGS = 10V,*1
6.4
9.6
Turn-On Delay Time
td(on)
VDD = 15V
8.1
Rise Time
Turn-Off Delay Time
Fall Time
tr
ID = 1.0A
8.9
13
RG = 6.0
26
39
tf
RD = 15
17
26
Input Capacitance
Ciss
VGS = 0V
650
Output Capacitance
Coss
VDS = 25V
320
Reverse Transfer Capacitance
Crss
f = 1.0MHz
130
Continuous Source Current
Body Diode)
A
nA
nC
12
td(off)
*1
Unit
V
VGS = 10V, ID = 5.8A*1
VDS = VGS, ID = 250 A
Gate-to-Source Reverse Leakage
Max
0.022
gfs
IGSS
Typ
ID = 1mA,Reference to 25
VGS(th)
IDSS
Drain-to-Source Leakage Current
VGS = 0V, ID = 250A
TJ
Min
ns
pF
IS
2.5
ISM
30
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
0.78
1.0
V
Reverse Recovery Time
trr
TJ = 25 , IF =1.7A
45
68
ns
Reverse RecoveryCharge
Qrr
di/dt = 100A/
58
87
*1 Pulse width
300 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited bymax
2
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TJ = 25 , IS = 1.7A, VGS = 0V*1
s*1
C