Transistors SMD Type Epitaxial Planar PNP Transistor KTA1660 Features High Voltage: VCEO=-150V High Transition Frequency:fT=120MHz Small Flat Package Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Colletor-Base Voltage Parameter VCBO -150 V Colletor-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Collector Current IC -50 mA Base Current IB -10 mA Colletor Power Dissipation Junction Temperature Storage Temperature Range PC 500 mW PC* 1 W Tj 150 Tstg -55 to 150 * mounted on ceramic substrate (250mm2X0.8t) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector Cut-off Current ICBO VCB=-150V,IE=0 -0.1 ìA Emitter Cut-off Current IEBO VCE=-5V,IC=0 -0.1 ìA DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Colletor Output Capacitance hFE VCE=-5V,IC=-10mA VCE(sat) IC=-10mA,IB=-1mA -0.8 V VBE VCE=-5V,IC=-30mA -0.9 V fT VCE=-30V,IC=-10mA 120 VCB=-10V,IE=0,f=1MHz 4.0 Cob 70 240 MHz 5.0 pF hFE Classification Marking BO BY Rank O Y Type 70 140 120 240 www.kexin.com.cn 1