Transistors IC SMD Type TrenchMOSTM standard level FET KUK7109-75ATE 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Integrated temperature sensor 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 1 5 .2 5 -0+ 0.2.2 Q101 compliant 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 5 .6 0 Electrostatic discharge protection +0.1 5.08-0.1 +0.2 0.4-0.2 gate 11Gate drain 22Drain source 33Source Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage Symbol Rating Unit VDS 75 V Drain-gate voltage RGS = 20 KÙ VDGR 75 V Gate-source voltage VGS 20 V Drain current (DC) Tmb = 25 ,VGS = 10 V ID 120 A Drain current (DC) Tmb = 100 ,VGS = 10 V ID 75 A Drain current (pulse peak value) *1 IDM 480 A Total power dissipation Tmb = 25 Ptot 272 W 10 mA 50 mA gate-source clamping current (continuous) IGS(CL) gate-source clamping current *3 FET to temperature sense diode isolation voltage Storage & operating temperature Visol(FET-TSD) Tstg, Tj 100 V -55 to 175 120 A 75 A 480 A reverse drain current (DC) Tmb = 25 IDR pulsed reverse drain current *1 IDRM EDS(AL)S 739 J Thermal resistance junction to mounting base Rth j-mb 0.55 K/W Thermal resistance junction to ambient Rth j-a 50 K/W non-repetitive avalanche energy *2 * 1 Tmb = 25 ; pulsed; tp 10 ìs; *2 unclamped inductive load; ID = 75 A;VDS *3 tp = 5 ms; 75 V; VGS = 10 V; RGS = 50Ù;starting Tj = 25 = 0.01 www.kexin.com.cn 1 Transistors IC SMD Type KUK7109-75ATE Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage gate-source threshold voltage Symbol V(BR)DSS VGS(th) Testconditons Min ID = 0.25 mA; VGS = 0 V;Tj = 25 75 ID = 0.25 mA; VGS = 0 V;Tj = -55 70 ID = 1 mA; VDS = VGS;Tj = 25 2 ID = 1 mA; VDS = VGS;Tj = 175 1 Typ IDSS V 3 gate-source leakage current drain-source on-state resistance V(BR)GSS IG = IGSS RDSon 1 mA;-55 Tj 175 0.1 VGS = 10 V; VDS = 0 V;Tj = 25 VGS = 10 V; VDS = 0 V;Tj = 175 VGS = 10 V; ID = 50 A;Tj = 25 20 forward voltage; temperature sense diode total gate charge gate-to-source charge IF = 250 mA SF IF = 250 mA;-55 22 Vhys 125 mA IF 175 250 mA Qg(tot) Qgs VGS = 10 V; VDD = 60 V;ID = 25 A A A 1000 nA 10 . 648 Tj 10 250 8 -1.4 25 658 A 9 m 19 m 668 mV -1.54 -1.68 mV/K 32 50 mV 121 nC 20 nC gate-to-drain (Miller) charge Qgd 44 input capacitance Ciss 4700 3760 pF output capacitance Coss 800 665 pF 274 pF VGS = 0 V; VDS = 25 V;f = 1 MHz nC reverse transfer capacitance Crss 455 turn-on delay time td(on) 35 ns 108 ns 185 ns 100 ns rise time turn-off delay time tr td(off) VDD = 30 V; RL = 1.2Ù;VGS = 10 V; RG = 10Ù fall time tf internal drain inductance Ld measured from upper edge of drain mounting base to center of die 2.5 nH internal source inductance Ls measured from source lead to source bond pad 7.5 nH Is = 25A; VGS = 0 V 0.85 source-drain (diode forward) voltage 2 VF V 22 VGS = 10 V; ID = 50 A;Tj = 175 temperature coefficient temperature sense diode temperature sense diode forward voltage hysteresis V V VDS = 75 V; VGS = 0 V;Tj = 175 gate-source breakdown voltage 4 4.4 VDS = 75 V; VGS = 0 V;Tj = 25 Unit V ID = 1 mA; VDS = VGS;Tj = -55 Zero gate voltage drain current Max VSD 1.2 V reverse recovery time trr IS = 20 A; -dIF/dt = -100 A/ìs; 75 ns recovered charge Qr VGS = -10 V; VDS = 30 V 270 nC www.kexin.com.cn