Transistors IC SMD Type TrenchPLUS standard level FET KUK7105-40AIE TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features +0.1 1.27-0.1 +0.2 4.57-0.2 Integrated temperature sensor 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 Q101 compliant 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 5 .6 0 Electrostatic discharge protection +0.2 0.4-0.2 gate 11Gate drain 22Drain source 33Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-source voltage VDS 40 V Drain-gate voltage RGS = 20 K VDGS 40 V Gate-source voltage VGS Drain current (DC) Tmb = 25 ,VGS = 10 V ID 20 V 155 A Drain current (DC) Tmb = 100 ,VGS = 10 V ID 75 A peak drain current *1 IDM 620 A Total power dissipation Tmb = 25 Ptot 272 W gate-source clamping current (continuous) IGS(CL) gate-source clamping current *3 Storage & operating temperature reverse drain current (DC) Tmb = 25 Tstg, Tj IDR 10 mA 50 mA -55 to 175 155 A 75 A IDRM 620 A EDS(AL)S 1.46 J Thermal resistance junction to mounting base Rth j-mb 0.55 K/W Thermal resistance junction to ambient Rth j-a 50 K/W pulsed reverse drain current *1 non-repetitive avalanche energy *2 * 1 Tmb = 25 ; pulsed; tp 10 ìs; *2 unclamped inductive load; ID = 75 A;VDS *3 tp = 5 ms; 40 V; VGS = 10 V; RGS = 50Ù;starting Tj = 25 = 0.01 www.kexin.com.cn 1 Transistors IC SMD Type KUK7105-40AIE Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage gate-source threshold voltage Symbol V(BR)DSS VGS(th) Testconditons Min ID = 0.25 mA; VGS = 0 V;Tj = 25 40 ID = 0.25 mA; VGS = 0 V;Tj = -55 36 ID = 1 mA; VDS = VGS;Tj = 25 2 ID = 1 mA; VDS = VGS;Tj = 175 1 Typ IDSS V 3 gate-source leakage current V(BR)GSS IG = IGSS VGS = VGS = drain-source on-state resistance RDSon 1 mA;-55 Tj 175 0.1 20 . 4.5 VGS = 10 V; ID = 50 A;Tj = 175 drain-Isense on-state resistance ratio of drain current to sense current total gate charge ID/Isense Qgs gate-to-drain (Miller) charge Qgd A A V 1000 nA A 5 m 9.5 m VGS = 10 V; ID = 100 mA;Tj = 25 0.98 1.08 1.18 VGS = 10 V; ID = 100 mA;Tj = 175 1.86 2.05 2.24 VGS 450 500 550 120 127 nC 19 22 nC 50 60 nC 4300 5000 pF 1400 1670 pF 820 1100 pF 10 V;-55 Tj 175 Qg(tot) gate-to-source charge VGS = 10 V; VDD = 32 V;ID = 25 A input capacitance Ciss output capacitance Coss reverse transfer capacitance Crss turn-on delay time td(on) 35 ns tr 115 ns 155 ns rise time turn-off delay time fall time td(off) VGS = 0 V; VDS = 25 V;f = 1 MHz VDD = 30 V; RL = 1.2Ù;VGS = 10 V; RG = 10Ù tf 110 ns 2.5 nH nH internal drain inductance Ld measured from upper edge of drain mounting base to center of die internal source inductance Ls measured from source lead to source bond pad 7.5 Is = 25A; VGS = 0 V 0.85 source-drain (diode forward) voltage 2 RD(Is)on 10 10 10 V; VDS = 0 V;Tj = 175 VGS = 10 V; ID = 50 A;Tj = 25 V 250 22 22 10 V; VDS = 0 V;Tj = 25 V V VDS = 40 V; VGS = 0 V;Tj = 175 gate-source breakdown voltage 4 4.4 VDS = 40 V; VGS = 0 V;Tj = 25 Unit V ID = 1 mA; VDS = VGS;Tj = -55 Zero gate voltage drain current Max VSD 1.2 V reverse recovery time trr IS = 20 A; dIF/dt = -100 A/ìs; 96 ns recovered charge Qr VGS = -10 V; VDS = 30 V 224 nC www.kexin.com.cn