KEXIN KUK7109

Transistors
IC
SMD Type
TrenchMOSTM standard level FET
KUK7109-75AIE
1 .2 7 -0+ 0.1.1
TO-263
Features
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
Q101 compliant
0.1max
+0.1
1.27-0.1
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
+0.1
5.08-0.1
2 .5 4 -0+ 0.2.2
5 .2 8 -0+ 0.2.2
Standard level compatible.
1 5 .2 5 -0+ 0.2.2
8 .7 -0+ 0.2.2
Electrostatic discharge protection
5 .6 0
Integrated temperature sensor
+0.2
0.4-0.2
gate
11Gate
drain
22Drain
source
33Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
VDS
75
V
Drain-gate voltage
VDGR
75
V
Gate-source voltage
VGS
Drain-source voltage
20
V
Drain current (DC) Tmb = 25 ,VGS = 10 V
ID
120
A
Drain current (DC) Tmb = 100 ,VGS = 10 V
ID
75
A
Drain current (pulse peak value) *1
IDM
480
A
Total power dissipation Tmb = 25
Ptot
272
W
10
mA
50
mA
gate-source clamping current (continuous)
IGS(CL)
gate-source clamping current *3
Storage & operating temperature
reverse drain current (DC) Tmb = 25
Tstg, Tj
IDR
-55 to 175
120
A
75
A
IDRM
480
A
EDS(AL)S
739
J
Vesd
6
KV
Thermal resistance junction to mounting base
Rth j-mb
0.55
K/W
Thermal resistance junction to ambient
Rth j-a
50
K/W
pulsed reverse drain current *1
non-repetitive avalanche energy *2
electrostatic discharge voltage; all pins *4
* 1 Tmb = 25 ; pulsed; tp
10 ìs;
*2 unclamped inductive load; ID = 75 A;VDS
*3 tp = 5 ms;
75 V; VGS = 10 V; RGS = 50Ù;starting Tj = 25
= 0.01
*4 Human Body Model; C = 100 pF;R = 1.5 K
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1
Transistors
IC
SMD Type
KUK7109-75AIE
Electrical Characteristics Ta = 25
Parameter
drain-source breakdown voltage
gate-source threshold voltage
Symbol
V(BR)DSS
VGS(th)
Testconditons
Min
Typ
IDSS
ID = 0.25 mA; VGS = 0 V;Tj = 25
75
V
70
V
ID = 1 mA; VDS = VGS;Tj = 25
2
ID = 1 mA; VDS = VGS;Tj = 175
1
3
4.4
0.1
VDS = 75 V; VGS = 0 V;Tj = 25
gate-source leakage current
drain-source on-state resistance
V(BR)GSS IG =
IGSS
RDSon
1 mA;-55
Tj
175
VGS =
10 V; VDS = 0 V;Tj = 25
VGS =
10 V; VDS = 0 V;Tj = 175
VGS = 10 V; ID = 50 A;Tj = 25
20
total gate charge
VGS > 10 V;-55
Tj
175
Qg(tot)
VGS = 10 V; VDD = 60 V;ID = 25 A
V
10
A
250
A
22
1000
nA
10
A
.
8
9
m
19
m
450
500
550
121
nC
gate-to-source charge
Qgs
20
nC
gate-to-drain (Miller) charge
Qgd
44
nC
input capacitance
Ciss
4700
pF
output capacitance
Coss
800
pF
reverse transfer capacitance
Crss
455
pF
turn-on delay time
td(on)
35
ns
108
ns
185
ns
100
ns
rise time
turn-off delay time
tr
td(off)
VGS = 0 V; VDS = 25 V;f = 1 MHz
VDD = 30 V; RL = 1.2Ù;VGS = 10 V; RG =
10Ù
fall time
tf
internal drain inductance
Ld
measured from upper edge of drain
mounting base to center of die
2.5
nH
internal source inductance
Ls
measured from source lead to source
bond pad
7.5
nH
Is = 25A; VGS = 0 V
0.85
source-drain (diode forward) voltage
2
ID/Isense
V
22
VGS = 10 V; ID = 50 A;Tj = 175
ratio of drain current to sense current
4
V
VDS = 75 V; VGS = 0 V;Tj = 175
gate-source breakdown voltage
Unit
ID = 0.25 mA; VGS = 0 V;Tj = -55
ID = 1 mA; VDS = VGS;Tj = -55
Zero gate voltage drain current
Max
VSD
1.2
V
reverse recovery time
trr
IS = 20 A; -dIF/dt = -100 A/ìs;
75
ns
recovered charge
Qr
VGS = -10 V; VDS = 30 V
270
nC
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