KEXIN KUK7107

Transistors
IC
SMD Type
TrenchPLUS standard level FET
KUK7107-55ATE
1 .2 7 -0+ 0.1.1
TO-263
Features
Integrated temperature sensor
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
+0.1
5.08-0.1
1 5 .2 5 -0+ 0.2.2
0.1max
+0.1
1.27-0.1
5 .2 8 -0+ 0.2.2
Standard level compatible
2 .5 4 -0+ 0.2.2
8 .7 -0+ 0.2.2
Q101 compliant
5 .6 0
ESD protection
+0.2
0.4-0.2
gate
11Gate
drain
22Drain
source
33Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
VDS
55
V
Drain-gate voltage IDG = 250 ìA
VDGR
55
V
Gate-source voltage
VGS
Drain-source voltage
20
V
Drain current (DC) Tmb = 25 ,VGS = 10 V
ID
140
A
Drain current (DC) Tmb = 100 ,VGS = 10 V
ID
75
A
peak drain current *1
IDM
560
A
Total power dissipation Tmb = 25
Ptot
272
W
10
mA
50
mA
gate-source clamping current (continuous)
IGS(CL)
gate-source clamping current *3
FET to temperature sense diode isolation voltage
Storage & operating temperature
Visol(FET-TSD)
Tstg, Tj
100
V
-55 to 175
140
A
reverse drain current (DC) Tmb = 25
IDR
75
A
pulsed reverse drain current *1
IDRM
560
A
EDS(AL)S
460
J
Thermal resistance junction to mounting base
Rth j-mb
0.55
K/W
Thermal resistance junction to ambient
Rth j-a
50
K/W
non-repetitive avalanche energy *2
* 1 Tmb = 25 ; pulsed; tp
10 ìs;
*2 unclamped inductive load; ID = 68 A;VDS
*3 tp = 5 ms;
55 V; VGS = 10 V; RGS = 50Ù;starting Tj = 25
= 0.01
*4 Human Body Model; C = 100 pF; R = 1.5 k
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1
Transistors
IC
SMD Type
KUK7107-55ATE
Electrical Characteristics Ta = 25
Parameter
drain-source breakdown voltage
gate-source threshold voltage
Symbol
V(BR)DSS
VGS(th)
Testconditons
Min
ID = 0.25 mA; VGS = 0 V;Tj = 25
55
ID = 0.25 mA; VGS = 0 V;Tj = -55
50
ID = 1 mA; VDS = VGS;Tj = 25
2
ID = 1 mA; VDS = VGS;Tj = 175
1
Typ
IDSS
V
3
gate-source leakage current
V(BR)GSS
IGSS
IG =
1 mA;-55
VGS =
VGS =
drain-source on-state resistance
RDSon
Tj
175
0.1
20
.
5.8
VGS = 10 V; ID = 50 A;Tj = 175
forward voltage, temperature sense diode
VF
IF = 250 mA
temperature coefficient temperature sense
diode
SF
IF = 250 mA;-55
temperature sense diode forward voltage
hysteresis
total gate charge
gate-to-source charge
125 ìA
IF
175
250 ìA
Qg(tot)
Qgs
VGS = 10 V; VDD = 44 V;ID = 25 A
A
A
V
1000
nA
-1.4
25
658
A
7
m
14
m
668
mV
-1.54 -1.68 mV/K
32
50
mV
116
nC
19
nC
gate-to-drain (Miller) charge
Qgd
50
nC
input capacitance
Ciss
4500
pF
output capacitance
Coss
960
pF
VGS = 0 V; VDS = 25 V;f = 1 MHz
reverse transfer capacitance
Crss
510
pF
turn-on delay time
td(on)
36
ns
115
ns
159
ns
111
ns
rise time
turn-off delay time
tr
td(off)
VDD = 30 V; RL = 1.2Ù;VGS = 10 V; RG =
10Ù
fall time
tf
internal drain inductance
Ld
measured from upper edge of drain
mounting base to center of die
2.5
nH
internal source inductance
Ls
measured from source lead to source
bond pad
7.5
nH
Is = 25A; VGS = 0 V
0.85
source-drain (diode forward) voltage
2
Vhys
648
Tj
10
10
10 V; VDS = 0 V;Tj = 175
VGS = 10 V; ID = 50 A;Tj = 25
V
250
22
22
10 V; VDS = 0 V;Tj = 25
V
V
VDS = 55 V; VGS = 0 V;Tj = 175
gate-source breakdown voltage
4
4.4
VDS = 55 V; VGS = 0 V;Tj = 25
Unit
V
ID = 1 mA; VDS = VGS;Tj = -55
Zero gate voltage drain current
Max
VSD
1.2
V
reverse recovery time
trr
IS = 20 A; dIF/dt = -100 A/ìs;
80
ns
recovered charge
Qr
VGS = -10 V; VDS = 30 V
200
nC
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