Transistors IC SMD Type TrenchPLUS standard level FET KUK7107-55ATE 1 .2 7 -0+ 0.1.1 TO-263 Features Integrated temperature sensor Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 Q101 compliant 5 .6 0 ESD protection +0.2 0.4-0.2 gate 11Gate drain 22Drain source 33Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS 55 V Drain-gate voltage IDG = 250 ìA VDGR 55 V Gate-source voltage VGS Drain-source voltage 20 V Drain current (DC) Tmb = 25 ,VGS = 10 V ID 140 A Drain current (DC) Tmb = 100 ,VGS = 10 V ID 75 A peak drain current *1 IDM 560 A Total power dissipation Tmb = 25 Ptot 272 W 10 mA 50 mA gate-source clamping current (continuous) IGS(CL) gate-source clamping current *3 FET to temperature sense diode isolation voltage Storage & operating temperature Visol(FET-TSD) Tstg, Tj 100 V -55 to 175 140 A reverse drain current (DC) Tmb = 25 IDR 75 A pulsed reverse drain current *1 IDRM 560 A EDS(AL)S 460 J Thermal resistance junction to mounting base Rth j-mb 0.55 K/W Thermal resistance junction to ambient Rth j-a 50 K/W non-repetitive avalanche energy *2 * 1 Tmb = 25 ; pulsed; tp 10 ìs; *2 unclamped inductive load; ID = 68 A;VDS *3 tp = 5 ms; 55 V; VGS = 10 V; RGS = 50Ù;starting Tj = 25 = 0.01 *4 Human Body Model; C = 100 pF; R = 1.5 k www.kexin.com.cn 1 Transistors IC SMD Type KUK7107-55ATE Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage gate-source threshold voltage Symbol V(BR)DSS VGS(th) Testconditons Min ID = 0.25 mA; VGS = 0 V;Tj = 25 55 ID = 0.25 mA; VGS = 0 V;Tj = -55 50 ID = 1 mA; VDS = VGS;Tj = 25 2 ID = 1 mA; VDS = VGS;Tj = 175 1 Typ IDSS V 3 gate-source leakage current V(BR)GSS IGSS IG = 1 mA;-55 VGS = VGS = drain-source on-state resistance RDSon Tj 175 0.1 20 . 5.8 VGS = 10 V; ID = 50 A;Tj = 175 forward voltage, temperature sense diode VF IF = 250 mA temperature coefficient temperature sense diode SF IF = 250 mA;-55 temperature sense diode forward voltage hysteresis total gate charge gate-to-source charge 125 ìA IF 175 250 ìA Qg(tot) Qgs VGS = 10 V; VDD = 44 V;ID = 25 A A A V 1000 nA -1.4 25 658 A 7 m 14 m 668 mV -1.54 -1.68 mV/K 32 50 mV 116 nC 19 nC gate-to-drain (Miller) charge Qgd 50 nC input capacitance Ciss 4500 pF output capacitance Coss 960 pF VGS = 0 V; VDS = 25 V;f = 1 MHz reverse transfer capacitance Crss 510 pF turn-on delay time td(on) 36 ns 115 ns 159 ns 111 ns rise time turn-off delay time tr td(off) VDD = 30 V; RL = 1.2Ù;VGS = 10 V; RG = 10Ù fall time tf internal drain inductance Ld measured from upper edge of drain mounting base to center of die 2.5 nH internal source inductance Ls measured from source lead to source bond pad 7.5 nH Is = 25A; VGS = 0 V 0.85 source-drain (diode forward) voltage 2 Vhys 648 Tj 10 10 10 V; VDS = 0 V;Tj = 175 VGS = 10 V; ID = 50 A;Tj = 25 V 250 22 22 10 V; VDS = 0 V;Tj = 25 V V VDS = 55 V; VGS = 0 V;Tj = 175 gate-source breakdown voltage 4 4.4 VDS = 55 V; VGS = 0 V;Tj = 25 Unit V ID = 1 mA; VDS = VGS;Tj = -55 Zero gate voltage drain current Max VSD 1.2 V reverse recovery time trr IS = 20 A; dIF/dt = -100 A/ìs; 80 ns recovered charge Qr VGS = -10 V; VDS = 30 V 200 nC www.kexin.com.cn