Transistors IC SMD Type Product specification KUK7606-55B TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Very low on-state resistance Q101 compliant +0.2 4.57-0.2 0.1max 5 .2 8 -0+ 0.2.2 +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 8 .7 -0+ 0.2.2 Standard level compatible. 5 .6 0 rated 2 .5 4 -0+ 0.2.2 175 +0.1 1.27-0.1 +0.2 0.4-0.2 gate 11Gate drain 22Drain source 33Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS 55 V Drain-gate voltage RGS = 20 KÙ VDGR 55 V Gate-source voltage VGS Drain-source voltage V Drain current (DC) Tmb = 25 ,VGS = 10 V ID 145 A Drain current (DC) Tmb = 100 ,VGS = 10 V ID 75 A Drain current (pulse peak value) *1 IDM 582 A Total power dissipation Tmb = 25 Ptot 254 W Storage & operating temperature Tstg, Tj -55 to 175 reverse drain current (DC) Tmb = 25 IDR pulsed reverse drain current *1 IDRM 145 A 75 A 582 A EDS(AL)S 680 J Thermal resistance junction to mounting base Rth j-mb 0.59 K/W Thermal resistance junction to ambient Rth j-a 50 K/W non-repetitive avalanche energy *2 * 1 Tmb = 25 ; pulsed; tp 10 ìs; *2 unclamped inductive load; ID = 75 A;VDS http://www.twtysemi.com 55 V; VGS = 10 V; RGS = 50Ù;starting Tmb = 25 [email protected] 4008-318-123 1of 2 Transistors IC SMD Type Product specification KUK7606-55B Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage gate-source threshold voltage Symbol V(BR)DSS VGS(th) Testconditons Min Typ IDSS V ID = 0.25 mA; VGS = 0 V;Tj = -55 50 V ID = 1 mA; VDS = VGS;Tj = 25 2 ID = 1 mA; VDS = VGS;Tj = 175 1 3 0.02 VDS = 30 V; VGS = 0 V;Tj = 25 drain-source on-state resistance IGSS RDSon VGS = 20 V; VDS = 0 V VGS = 10 V; ID = 25 A;Tj = 25 total gate charge Qg(tot) Qgs gate-to-drain (Miller) charge Qgd 1 ìA 500 ìA 2 100 nA 6 mÙ 12 mÙ 64 nC 14 nC 19 nC 5100 pF 940 pF Crss 235 322 pF td(on) 30 ns tr 46 ns 85 ns 39 ns 4.5 nH reverse transfer capacitance turn-on delay time fall time V 783 Ciss Coss turn-off delay time 4.4 3825 input capacitance output capacitance rise time VGS = 10 V; VDD = 44 V;ID = 25 A V 5.1 VGS = 10 V; ID = 25 A;Tj = 175 gate-to-source charge 4 V VDS = 30 V; VGS = 0 V;Tj = 175 gate-source leakage current Unit 55 ID = 1 mA; VDS = VGS;Tj = -55 Zero gate voltage drain current Max ID = 0.25 mA; VGS = 0 V;Tj = 25 td(off) VGS = 0 V; VDS = 25 V;f = 1 MHz VDD = 30 V; RL = 1.2Ù;VGS = 10 V; RG = 10 Ù tf internal drain inductance Ld from drain lead 6 mm from package to centre of die 2.5 nH internal source inductance Ls from source lead to source bond pad 7.5 nH Is = 25 A; VGS = 0 V 0.85 source-drain (diode forward) voltage VSD 1.2 V reverse recovery time trr IS = 20 A; -dIF/dt = -100 A/ìs; 73 ns recovered charge Qr VGS = -10 V; VDS = 30 V 82 nC http://www.twtysemi.com [email protected] 4008-318-123 2 of 2