TYSEMI KUK7606-55B

Transistors
IC
SMD Type
Product specification
KUK7606-55B
TO-263
Unit: mm
1 .2 7 -0+ 0.1.1
Features
Very low on-state resistance
Q101 compliant
+0.2
4.57-0.2
0.1max
5 .2 8 -0+ 0.2.2
+0.1
1.27-0.1
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
+0.1
5.08-0.1
1 5 .2 5 -0+ 0.2.2
8 .7 -0+ 0.2.2
Standard level compatible.
5 .6 0
rated
2 .5 4 -0+ 0.2.2
175
+0.1
1.27-0.1
+0.2
0.4-0.2
gate
11Gate
drain
22Drain
source
33Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
VDS
55
V
Drain-gate voltage RGS = 20 KÙ
VDGR
55
V
Gate-source voltage
VGS
Drain-source voltage
V
Drain current (DC) Tmb = 25 ,VGS = 10 V
ID
145
A
Drain current (DC) Tmb = 100 ,VGS = 10 V
ID
75
A
Drain current (pulse peak value) *1
IDM
582
A
Total power dissipation Tmb = 25
Ptot
254
W
Storage & operating temperature
Tstg, Tj
-55 to 175
reverse drain current (DC) Tmb = 25
IDR
pulsed reverse drain current *1
IDRM
145
A
75
A
582
A
EDS(AL)S
680
J
Thermal resistance junction to mounting base
Rth j-mb
0.59
K/W
Thermal resistance junction to ambient
Rth j-a
50
K/W
non-repetitive avalanche energy *2
* 1 Tmb = 25 ; pulsed; tp
10 ìs;
*2 unclamped inductive load; ID = 75 A;VDS
http://www.twtysemi.com
55 V; VGS = 10 V; RGS = 50Ù;starting Tmb = 25
[email protected]
4008-318-123
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Transistors
IC
SMD Type
Product specification
KUK7606-55B
Electrical Characteristics Ta = 25
Parameter
drain-source breakdown voltage
gate-source threshold voltage
Symbol
V(BR)DSS
VGS(th)
Testconditons
Min
Typ
IDSS
V
ID = 0.25 mA; VGS = 0 V;Tj = -55
50
V
ID = 1 mA; VDS = VGS;Tj = 25
2
ID = 1 mA; VDS = VGS;Tj = 175
1
3
0.02
VDS = 30 V; VGS = 0 V;Tj = 25
drain-source on-state resistance
IGSS
RDSon
VGS =
20 V; VDS = 0 V
VGS = 10 V; ID = 25 A;Tj = 25
total gate charge
Qg(tot)
Qgs
gate-to-drain (Miller) charge
Qgd
1
ìA
500
ìA
2
100
nA
6
mÙ
12
mÙ
64
nC
14
nC
19
nC
5100
pF
940
pF
Crss
235
322
pF
td(on)
30
ns
tr
46
ns
85
ns
39
ns
4.5
nH
reverse transfer capacitance
turn-on delay time
fall time
V
783
Ciss
Coss
turn-off delay time
4.4
3825
input capacitance
output capacitance
rise time
VGS = 10 V; VDD = 44 V;ID = 25 A
V
5.1
VGS = 10 V; ID = 25 A;Tj = 175
gate-to-source charge
4
V
VDS = 30 V; VGS = 0 V;Tj = 175
gate-source leakage current
Unit
55
ID = 1 mA; VDS = VGS;Tj = -55
Zero gate voltage drain current
Max
ID = 0.25 mA; VGS = 0 V;Tj = 25
td(off)
VGS = 0 V; VDS = 25 V;f = 1 MHz
VDD = 30 V; RL = 1.2Ù;VGS = 10 V; RG = 10
Ù
tf
internal drain inductance
Ld
from drain lead 6 mm from package to
centre of die
2.5
nH
internal source inductance
Ls
from source lead to source bond pad
7.5
nH
Is = 25 A; VGS = 0 V
0.85
source-drain (diode forward) voltage
VSD
1.2
V
reverse recovery time
trr
IS = 20 A; -dIF/dt = -100 A/ìs;
73
ns
recovered charge
Qr
VGS = -10 V; VDS = 30 V
82
nC
http://www.twtysemi.com
[email protected]
4008-318-123
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