Transistors IC SMD Type Product specification KUK7575-100A TO-263 TrenchMOS TM 1 .2 7 -0+ 0.1.1 Features technology Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. 2 .5 4 -0+ 0.2.2 rated 8 .7 -0+ 0.2.2 175 5 .6 0 Q101 compliant +0.1 5.08-0.1 +0.2 0.4-0.2 gate 11Gate drain 22Drain source 33Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS 100 V drain-gate voltage (DC) RGS = 20 kÙ VDGR 100 V gate-source voltage (DC) VGS 20 V drain-source voltage (DC) drain current (DC) Tmb = 25 ; VGS = 10 V ID 23 A 16.2 A peak drain current *1 IDM 92 A total power dissipation Tmb = 25 Ptot 99 W storage temperature Tstg -55 to 175 Tj -55 to 175 drain current (DC) Tmb = 100 ; VGS = 10 V operating junction temperature reverse drain current (DC) Tmb = 25 IDR 23 A pulsed reverse drain current *2 IDRM 92 A non-repetitive avalanche energy W DSS 100 mJ Rth(j-a) 50 K/W Rth(j-mb) 1.5 K/W thermal resistance from junction to ambient thermal resistance from junction to mounting base *1 Tmb = 25 ; pulsed; tp 10 ìs; *2 unclamped inductive load; ID = 14 A;VDS http://www.twtysemi.com 100 V; VGS = 10 V; RGS = 50Ù,starting Tmb= 25 [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification KUK7575-100A Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage gate-source threshold voltage Symbol V(BR)DSS VGS(th) Testconditons Min Typ IDSS gate-source leakage current IGSS V ID = 0.25 mA; VGS = 0 V;Tj = -55 89 V ID = 1 mA; VDS = VGS;Tj = 25 2 ID = 1 mA; VDS = VGS;Tj = 175 1 3 0.05 VDS = 100 V; VGS = 0 V;Tj = 25 RDSon VGS = 20 V; VDS = 0 V VGS = 10 V; ID = 13 A;Tj = 25 Ciss output capacitance Coss reverse transfer capacitance Crss turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance source-drain (diode forward) voltage V 4.4 V 10 mA 500 mA 2 100 nA 64 75 m 187 m VGS = 10 V; ID = 13 A;Tj = 175 input capacitance 4 V VDS = 100 V; VGS = 0 V;Tj = 175 drain-source on-state resistance Unit 100 ID = 1 mA; VDS = VGS;Tj = -55 drain-source leakage current Max ID = 0.25 mA; VGS = 0 V;Tj = 25 907 pF 127 pF 78 pF td(on) 8 ns tr 39 ns 26 ns VGS = 0 V; VDS = 25 V;f = 1 MHz VDD = 30 V; RL = 2.2Ù;VGS = 10 V; RG = 5.6Ù td(off) tf Ld Ls VSD from drain lead 6 mm from package to centre of die 24 ns 4.5 nH 2.5 nH from source lead to source bond pad 7.5 IS = 25 A; VGS = 0 V; 0.85 nH 1.2 V reverse recovery time trr IS = 13 A;dIS/dt = -100 A/ìs 64 ns recovered charge Qr VGS = -10 V; VDS = 30 V 120 nC http://www.twtysemi.com [email protected] 4008-318-123 2 of 2