MOSFET SMD Type HEXFET Power MOSFET KRLML6402 SOT-23 ■ Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Ultra low on-resistance. 0.4 3 ● Low profile(＜1.1mm). 1 0.55 ● SOT-23 Footprint. +0.1 1.3-0.1 +0.1 2.4-0.1 ● P-Channel MOSFET. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 ● Available in tape and reel. +0.05 0.1-0.01 +0.1 0.97-0.1 ● Fast switching. 0-0.1 +0.1 0.38-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Gate-to-source voltage VGS ±12 V Continuous drain curent,[email protected] , TA=25℃ ID IDM Power dissipation @TA=25℃ Power dissipation @TA=70℃ A -2.2 Continuous drain curent,[email protected] , TA=70℃ Pulsed drain current *1 -3.7 PD -22 1.3 A W 0.8 Linear derating factor 0.01 mW/℃ Single Pulse Avalanche Energy *2 EAS 11 MJ Maximum Junction-to-Ambient *3 RθJA 100 ℃/W TJ,TSTG -55 to +150 ℃ Junction and storage temperature range *1Reptitive rating:pulse width limited by max.junction temperature. *2. StartingTJ=25℃,L=1.65mH ,RG=25Ω,IAS=-3.7A. *3.Surface mounted on 1''square single layer 1oz.copper FR4 board,steady state. www.kexin.com.cn 1 MOSFET SMD Type HEXFET Power MOSFET KRLML6402 ■ Electrical Characteristics Ta = 25℃ Parameter Drain-source Breakdown voltage VDSS Gate-source leakage current IDSS Gate-source leadage IGSS Gate threshold voltage VGS(th) Static drain-source on- resistance Test conditions Symbol RDS(on) Min ID= -250 μA, VGS = 0V Typ Max -20 V VDS = -20 V, VGS = 0V -1.0 VDS = -20 V, VGS = 0V, TJ=70℃ -25 VGS =±12V VDS = VGS, ID= -250 μA -0.40 Unit ±100 nA V -0.55 -0.95 ID= -3.7A, VGS = -4.5V 0.050 0.065 ID= -3.1A, VGS = -2.5V 0.080 0.0135 Forward Transconductance gfs VDS = -10 V, ID = -3.7 A Input capacitance Ciss VDS = -10 V, 633 Output capacitance Coss VGS = 0 V, 145 Reverse transfer capacitance Crss f= 1MHz 110 Total Gate Charge Qg Gate-Source Charge Qgs μA 6.0 Ω S pF 8.0 12 VDS = -10V ,VGS = -5.0 V , ID= -3.7 A 1.2 1.8 2.8 4.2 ID= -3.7 A, 350 VDD= -10 V, 48 td(off) RD= 2.7Ω 588 tf RG= 89Ω 381 Reverse recovery time trr 43 ns Qrr TJ=25℃, IF = -1.0 A, di / dt = -100 A/μs *2 29 Reverse recovery charge 11 17 nC Continuous source current IS Gate-Drain Charge Qgd Turn-on delay time td(on) Rise time Turn-off delay time Fall time Pulsed source current *1 Diode forward voltage tr ISM VSD MOSFET symbo l showing the integral reverse p-n junction diode nC ns D -1.3 A G TJ=25℃,VGS = 0 V, IS = -1.0 A *2 -22 S -1.2 V *1 Repetitive rating;pulse width limited by max.junction temperature. * 2 Pulse width ≤ 300μs, Duty cycle ≤ 2% www.kexin.com.cn 2