Transistors IC SMD Type 2.0W Surface Mount Complementary NPN Silicon Power Transistor KZT3055(CZT3055) SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 Low voltage (max. 60V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 High current (max. 6A). +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector 1 3 2 3 Emitter +0.1 0.70-0.1 2.9 4.6 4 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 100 V Collector - emitter votage VCER 70 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V IC 6 A Base current IB 3 A power dissipation PD 2 W Collector current Thermal resistance Junction-to-Ambient R 62.5 JA Junction temperature Tj 150 Storage temperature Tstg -65 to +150 /W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to emitter breakdown voltage VCEO IC=30mA 60 V Collector to emitter breakdown voltage VCER IC=30mA,RBE=100 70 V ICEO VCE=30V 700 A ICEV VCE=100V,VEB=1.5V 1.0 mA IEBO VEB = 7.0 V 5.0 mA Collctor cutoff current Emitter cutoff current DC current gain hFE IC = 4.0A; VCE =4.0 V 20 IC = 6.0A; VCE = 4.0V 5.0 Collector to emitter saturation voltage VCE(sat) IC = 4.0A; IB =400mA Base to emitter ON voltage VBE(on) Transition frequency fT VCE=4.0V,IC=4.0A IC= 500mA; VCE =10V; f = 1.0 MHz 2.5 70 1.1 V 1.5 V MHz www.kexin.com.cn 1