Diodes SMD Type Schottky Barrier Diode RB160M-30 SOD-123 Features Unit: mm +0.1 2.7-0.1 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 1.6-0.1 Small power mold type. Low IR High reliability +0.1 3.7-0.1 0.50 1.10 0.05 0.35 0.03 3.8 0.1 +0.05 0.1-0.02 0.128 0.1max Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Reverse voltage VRM 30 V reverse voltage VR 30 V Forward current surge peak Io 1 A IFSM 30 A Tj 125 Tstg -40 to +150 Average rectified forward current operating junction temperature storage temperature Electrical Characteristics Ta = 25 Parameter Forward voltage Reverse current Symbol Typ Max Unit VF1 IF=0.5A Testconditons Min 0.39 0.46 V VF2 IF=1.0A 0.43 0.48 V IR1 VR=15V 3.0 20 A IR2 VR=30V 9.0 50 A www.kexin.com.cn 1 Diodes SMD Type RB160M-30 zElectrical characteristic curves (Ta=25°C) 1 10000 Ta=75℃ 1000 Ta=125℃ Ta=25℃ 0.1 Ta=-25℃ 0.01 1000 Ta=75℃ 100 1 Ta=-25℃ 0.1 100 10 0.01 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 600 5 10 15 20 25 30 0 AVE:424.2mV 410 70 60 50 40 30 AVE:8.172uA 20 400 380 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 420 80 370 360 350 AVE:324.4pF 340 330 320 10 310 0 300 VF DISPERSION MAP Ta=25℃ f=1MHz VR=0V n=10pcs 390 Ta=25℃ VR=30V n=30pcs 90 REVERSE CURRENT:IR(uA) 430 Ct DISPERSION MAP IR DISPERSION MAP RESERVE RECOVERY TIME:trr(ns) 8.3ms 100 AVE:98.0A 50 100 20 1cyc Ifsm Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 15 10 AVE:11.7ns 5 PEAK SURGE FORWARD CURRENT:IFSM(A) 150 0 0 50 Ifsm 8.3ms 8.3ms 1cyc 0 1 1000 t 100 50 0 2 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.kexin.com.cn 100 1 IF=0.5A Rth(j-a) 100 1ms time 300us 10 Rth(j-c) 1 D=1/2 0.8 DC 0.6 Sin(θ＝180) 0.4 0.2 0 0.1 0.001 100 Mounted on epoxy board IM=10mA FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP IFSM DISRESION MAP 150 30 400 100 Ta=25℃ IF=1A n=30pcs 440 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 450 FORWARD VOLTAGE:VF(mV) Ta=25℃ 10 0.001 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) f=1MHz Ta=125℃ 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2