MICROSEMI 2N3720

7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
2N3720
APPLICATIONS:
•
•
•
High-Speed Switching
Medium-Current Switching
High-Frequency Amplifiers
FEATURES:
•
Collector-Emitter Sustaining Voltage:
VCEO(SUS) = 60 Vdc (Min) - 2N3720
•
DC Current Gain:
hFE = 25-180 @ IC = 1.0 Adc
•
Low Collector-Emitter Saturation Voltage:
VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc
•
High Current-Gain - Bandwidth Product:
fT = 90 MHz (Typ)
Silicon PNP
Power Transistors
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE DIFFUSED
PLANAR process. This technology produces high voltage devices with
excellent switching speeds, frequency response, gain linearity, saturation
voltages, high current gain, and safe operating areas. They are intended for
use in Commercial, Industrial, and Military power switching, amplifier, and
regulator applications.
Ultrasonically bonded leads and controlled die mount techniques are utilized
to further increase the SOA capability and inherent reliability of these
devices. The temperature range to 200° C permits reliable operation in high
ambients, and the hermetically sealed package insures maximum reliability
and long life.
TO-5
ABSOLUTE MAXIMUM
MAXIMUM RATINGS:
SYMBOL
VCEO*
VCB*
VEB*
IC*
IC*
IB*
T STG*
T J*
PD*
PD*
θ
JC
VALUE
UNITS
Collector-Emitter Voltage
Collector-Base Voltage
CHARACTERISTIC
60
60
Vdc
Vdc
Emitter-Base Voltage
4.0
Vdc
Peak Collector Current
10
Adc
Continuous Collector Current
3.0
Adc
Base Current
Storage Temperature
Operating Junction Temperature
Total Device Dissipation
TC = 25° C
Derate above 25° C
Total Device Dissipation
T A = 25° C
Derate above 25° C
Thermal Resistance
Junction to Case
Junction to Ambient
* Indicates JEDEC registered Data.
MSC1027.PDF 02-24-99
0.5
Adc
-65 to 200
-65 to 200
6.0
°C
°C
Watts
34.3
1.0
mW/° C
Watts
5.71
mW/° C
29
175
° C/W
° C/W
2N3720
ELECTRICAL CHARACTERISTICS:
(25° Case Temperature Unless Otherwise Noted)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VALUE
Min.
Max.
Units
ICEX*
Collector-Emitter
Sustaining Voltage
Collector Cutoff Current
VCE = 60 Vdc, VBE(off) = 2.0 Vdc, TC = 150° C
-------
ICBO*
Collector Cutoff Current
VCB = 60 Vdc, IE = 0
----
10
µAdc
IEBO*
Emitter Cutoff Current
VBE = 4.0 Vdc, IC = 0
----
1.0
mAdc
hFE*
DC Current Gain
(Note 1)
IC = 500 mAdc, VCE = 1.5 Vdc
20
----
----
IC = 1.0 Adc, VCE = 1.5 Vdc
25
180
----
15
----
----
VCEO(sus)*
IC = 20 mAdc, IB = 0 (Note 1)
60
----
Vdc
VCE = 60 Vdc, VBE(off) = 2.0 Vdc
10
1.0
µAdc
mAdc
IC = 1.0 Adc, VCE = 1.5 Vdc, TC =
VCE(sat)*
- 40° C
- 40° C to + 100° C
IC = 3.0 Adc, IB = 300 mAdc, TC = - 40° C to + 100° C
----
0.75
Vdc
----
1.5
Vdc
- 40° C to + 100° C
- 40° C to + 100° C
----
1.5
Vdc
----
2.3
Vdc
IC = 500 mAdc, VCE = 10 Vdc, ftest = 30 MHz
60
----
MHz
Cob*
Collector-Emitter
Saturation Voltage
(Note 1)
Base-Emitter Saturation
Voltage
(Note 1)
Current-Gain Bandwidth
Product
(Note 2)
Output Capacitance
VCB = 10 Vdc, IE = 0, f = 0.1 MHz
----
120
pF
Cib*
Input Capacitance
VEB = 0.5 Vdc, IC = 0, f = 0.1 MHz
----
1000
pF
ton*
Turn-on Time
VCC = 12 Vdc, VBE(off) = 0, IC = 1.0 Adc, IB1 = 0.1 Adc
----
100
ns
toff*
Turn-off Time
VCC = 12 Vdc, IC = 1.0 Adc, IB1 = IB2 = 100 mAdc
----
400
ns
VBE(sat)*
fT*
IC = 1.0 Adc, IB = 100 mAdc, TC =
IC = 1.0 Adc, IB = 100 mAdc, TC =
IC = 3.0 Adc, IB = 300 mAdc, TC =
Note 1: Pulse Test: Pulse width ≤ 300µ S, Duty Cycle = 2.0%.
Note 2: fT = | hfe | * ftest
* Indicates JEDEC registered data
MSC1027.PDF 02-24-99
2N3720
PACKAGE MECHANICAL DATA:
1.500 [38.10] MIN
.031 [.787]
.240 [6.09]
.260 [6.60]
. 029 [.736]
.045 [1.14]
45°
.010 [.254]
.030 [.762]
.200 [5.08]
Ø.305 [7.75]
Ø.335 [8.51]
.100 [2.54]
[+.051]
Ø.017 +.002
-.001 [.432] [.025]
.100 [2.54]
Ø.335 [8.51]
Ø.370 [9.40]
NOTE: DIMENSIONS IN [ ] = MILLIMETERS
MSC1027.PDF 02-24-99