MICROSEMI 2N3421

7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
2N3421
APPLICATIONS:
•
•
•
Power Supply
Pulse Amplifier
High Frequency Power Switching
FEATURES:
•
•
•
•
•
Meets MIL-S-19500/393
Collector-Base Voltage: up to 125
Peak Collector Current: 5A
High Power Dissipation in TO-5: 15W @ TC = 100° C
Fast Switching
3 Amp, 125V,
NPN Silicon Power
Transistors
JAN, JTX, JTXV, JANS
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200° C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
TO-5
SYMBOL
VCBO*
VCEO*
VEBO*
IC *
IC *
T STG*
T J*
PT *
* Indicates
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
D.C. Collector Current
Peak Collector Current
Storage Temperature
Operating Junction Temperature
Power Dissipation
T C = 25° C Ambient
T C = 100° C Case
MIL-S-19500/393
MSC0983A.DOC 12-02-98
125
80
8
3
5
-65 to 200
-65 to 200
Volts
Volts
Volts
Amps
Amps
°C
°C
1.0
Watts
15
Watts
2N3421
ELECTRICAL CHARACTERISTICS:
CHARACTERISTICS:
(25° Case Temperature Unless Otherwise Noted)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VALUE
Min.
Max.
Units
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Cutoff Current
IC = 50 mAdc, Cond. D (Note 1)
80
----
Vdc
VEB = 0.5 Vdc, Cond. A, VCE = 120 Vdc
VEB = 0.5 Vdc, Cond. A, TA = 150° C, VCE = 120 Vdc
-------
0.3
50
µ Adc
Collector-Emitter
Cutoff Current
Emitter-Base
Cutoff Current
D.C. Current Gain
(Note 1)
VCE = 60 Vdc, Cond. D
----
5.0
µ Adc
VEB = 6 Vdc, Cond. D
VEB = 8 Vdc, Cond. D
IC = 100 mAdc, VCE = 2 Vdc
IC = 1 Adc, VCE = 2 Vdc
IC = 2 Adc, VCE = 2 Vdc
IC = 5 Adc, VCE = 5 Vdc
IC = 1 Adc, VCE = 2 Vdc, TA = - 55° C
------40
40
30
15
10
0.5
10
---120
----------
µ Adc
µ Adc
VCE(sat)*
Collector-Emitter
Saturation Voltage
(Note 1)
IC = 1 Adc, IB = 0.1 Adc
IC = 2 Adc, IB = 0.2 Adc
-------
0.25
0.5
Vdc
Vdc
VBE(sat)*
Base-Emitter Saturation
Voltage (Note 1)
Forward Biased Second
Breakdown
IC = 1 Adc, IB = 0.1 Adc
IC = 2 Adc, IB = 0.2 Adc
0.6
0.7
1.2
1.4
Vdc
Vdc
VCE = 5 Vdc, TC = 100° C
VCE = 37 Vdc, TC = 100° C
VCE = 80 Vdc, TC = 100° C
3
0.4
120
----------
Adc
Adc
mAdc
IC = 3 Adc, L = 10 mH, Base Open
45
----
mj
ES/b*
Unclamped Reverse
Biased Second
Breakdown
Clamped Reverse Biased
Second Breakdown
IC = 3 Adc, L = 40 mH, VClamp = 125V
180
----
mj
fT *
Gain Bandwidth Product
IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz
26
160
MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, f = 1 MHz
----
150
pf
ton
Turn-on Time
IC = 1 Adc, IB1 = - IB2 = 0.1 Adc
----
0.3
µs
toff
Turn-off Time
IC = 1 Adc, IB1 = - IB2 = 0.1 Adc
----
1.2
µs
BVCEO*
ICEX*
ICEO*
IEBO*
hFE*
IS/b*
ES/b*
COb*
Note 1: Pulse Test: Pulse width = 300µ Sec., duty cycle ≤ 2%.
* Indicates MIL-S-19500/393
MSC0983A.DOC 12-02-98
µ Adc
----------------
2N3421
PACKAGE MECHANICAL DATA:
1.500 [38.10] MIN
.031 [.79]
.240 [6.35]
.260 [6.60]
.029 [.74]
.045 [1.14]
45°
.010 [.25]
.030 [.76]
.200 [5.08]
Ø.305 [7.75]
Ø.335 [8.51]
.100 [2.54]
Ø.017 +.002
-.001 [.432]
[+.051]
[.025]
.100 [2.54]
Ø.335 [8.51]
Ø.370 [9.40]
NOTE: DIMENSIONS IN [ ] = MILLIMETERS
MSC0983A.DOC 12-02-98