7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3420 APPLICATIONS: • • • Power Supply Pulse Amplifier High Frequency Power Switching FEATURES: • • • • • Meets MIL-S-19500/393 Collector-Base Voltage: up to 85 Peak Collector Current: 5A High Power Dissipation in TO-5: 15W @ TC = 100° C Fast Switching 3 Amp, 85V, NPN Silicon Power Transistors JAN, JTX, JTXV, JANS DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200° C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. TO-5 ABSOLUTE MAXIMUM RATINGS: SYMBOL VCBO* VCEO* VEBO* IC * IC * T STG* T J* PT * * Indicates CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage D.C. Collector Current Peak Collector Current Storage Temperature Operating Junction Temperature Power Dissipation T C = 25° C Ambient T C = 100° C Case MIL-S-19500/393 MSC0982A.DOC 12-02-98 VALUE UNITS 85 60 8 3 5 -65 to 200 -65 to 200 Volts Volts Volts Amps Amps °C °C 1.0 Watts 15 Watts 2N3420 ELECTRICAL CHARACTERISTICS: CHARACTERISTICS: (25° Case Temperature Unless Otherwise Noted) SYMBOL CHARACTERISTIC TEST CONDITIONS VALUE Min. Max. Units Collector-Emitter Breakdown Voltage Collector-Emitter Cutoff Current IC = 50 mAdc, Cond. D (Note 1) 60 ---- Vdc VEB = 0.5 Vdc, Cond. A, VCE = 80 Vdc VEB = 0.5 Vdc, Cond. A, TA = 150° C, VCE = 80 Vdc ------- 0.3 50 µ Adc Collector-Emitter Cutoff Current Emitter-Base Cutoff Current D.C. Current Gain (Note 1) VCE = 45 Vdc, Cond. D ---- 5.0 µ Adc VEB = 6 Vdc, Cond. D VEB = 8 Vdc, Cond. D IC = 100 mAdc, VCE = 2 Vdc IC = 1 Adc, VCE = 2 Vdc IC = 2 Adc, VCE = 2 Vdc IC = 5 Adc, VCE = 5 Vdc IC = 1 Adc, VCE = 2 Vdc, TA = - 55° C ------40 40 30 15 10 0.5 10 ---120 ---------- µ Adc µ Adc VCE(sat)* Collector-Emitter Saturation Voltage (Note 1) IC = 1 Adc, IB = 0.1 Adc IC = 2 Adc, IB = 0.2 Adc ------- 0.25 0.5 Vdc Vdc VBE(sat)* Base-Emitter Saturation Voltage (Note 1) Forward Biased Second Breakdown IC = 1 Adc, IB = 0.1 Adc IC = 2 Adc, IB = 0.2 Adc 0.6 0.7 1.2 1.4 Vdc Vdc VCE = 5 Vdc, TC = 100° C VCE = 37 Vdc, TC = 100° C VCE = 60 Vdc, TC = 100° C 3 0.4 185 ---------- Adc Adc mAdc IC = 3 Adc, L = 10 mH, Base Open 45 ---- mj ES/b* Unclamped Reverse Biased Second Breakdown Clamped Reverse Biased Second Breakdown IC = 3 Adc, L = 40 mH, VClamp = 125V 180 ---- mj fT * Gain Bandwidth Product IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz 26 160 MHz Output Capacitance VCB = 10 Vdc, IE = 0, f = 1 MHz ---- 150 pf ton Turn-on Time IC = 1 Adc, IB1 = - IB2 = 0.1 Adc ---- 0.3 µs toff Turn-off Time IC = 1 Adc, IB1 = - IB2 = 0.1 Adc ---- 1.2 µs BVCEO* ICEX* ICEO* IEBO* hFE* IS/b* ES/b* COb* Note 1: Pulse Test: Pulse width = 300µ Sec., duty cycle ≤ 2%. * Indicates MIL-S-19500/393 MSC0982A.DOC 12-02-98 µ Adc ---------------- 2N3420 PACKAGE MECHANICAL DATA: 1.500 [38.10] MIN .031 [.79] .240 [6.35] .260 [6.60] .029 [.74] .045 [1.14] 45° .010 [.25] .030 [.76] .200 [5.08] Ø.305 [7.75] Ø.335 [8.51] .100 [2.54] Ø.017 +.002 -.001 [.432] [+.051] [.025] .100 [2.54] Ø.335 [8.51] Ø.370 [9.40] NOTE: DIMENSIONS IN [ ] = MILLIMETERS MSC0982A.DOC 12-02-98