2N2857 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Ultra-High frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2857J) • JANTX level (2N2857JX) • JANTXV level (2N2857JV) • JANS level (2N2857JS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Features • • • • Hermetically sealed TO-72 metal can Also available in chip configuration Chip geometry 0011 Reference document: MIL-PRF-19500/343 Benefits • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25°C unless otherwise specified Symbol VCEO Rating 15 Collector-Base Voltage VCBO 30 Unit Volts Volts Emitter-Base Voltage VEBO 3 Volts IC 40 mA 200 1.14 300 1.71 Collector Current, Continuous Power Dissipation, TA = 25OC Derate linearly above 25OC Power Dissipation, TC = 25OC Derate linearly above 25OC Operating Junction Temperature Storage Temperature Copyright 2002 Rev. F TJ -65 to +200 mW mW/°C mW mW/°C °C TSTG -65 to +200 °C PT PT Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N2857 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage V(BR)CEO Test Conditions Min IC = 3 mA Typ Max Units Volts 15 Collector-Base Cutoff Current ICBO1 VCB = 15 Volts 10 nA Collector-Base Cutoff Current ICBO3 VCB = 30 Volts 1 µA Collector-Base Cutoff Current ICBO2 VCB = 15 Volts, TA = 150°C 1 µA Collector-Emitter Cutoff Current ICES VCE = 16 Volts 100 nA Emitter-Base Cutoff Current IEBO1 VEB = 3 Volts 10 µA On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol hFE1 hFE2 Base-Emitter Saturation Voltage VBEsat Test Conditions IC = 3 mA, VCE = 1 Volts IC = 3 mA, VCE = 1 Volts TA = -55°C IC = 10 mA, IB = 1 mA Collector-Emitter Saturation Voltage VCEsat IC = 10 mA, IB = 1 mA DC Current Gain Min 30 10 Typ Max 150 Units 1.0 Volts 0.4 Volts Max Units Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Collector to Base Feedback Capacitance Collector Base time constant Small Signal Power Gain Noise Figure Copyright 2002 Rev. F Symbol |hFE| hFE CCB rb’CC Gpe F Test Conditions VCE = 6 Volts, IC = 5 mA, f = 100 MHz VCE = 6 Volts, IC = 2 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VCB = 6 Volts, IE = 2 mA, f = 31.9 MHz VCE = 6 Volts, IE = 1.5 mA, f = 450 MHz VCE = 6 Volts, IC = 1.5 mA, f < 450 MHz, Rg = 50 Ω Min Typ 10 21 50 220 1 pF 4 15 ps 12.5 21 MHz 4.5 dB Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2