DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1807 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA1807 is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as DC/DC converters and power management of notebook computers and so on. 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 1.2 MAX. 1.0 ±0.05 0.25 FEATURES 3° +5° –3° • 4.0 V drive available • Low on-state resistance RDS(on)1 = 10 mΩ MAX. (VGS = 10 V, ID = 6.0 A) RDS(on)2 = 14 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A) RDS(on)3 = 16 mΩ MAX. (VGS = 4.0 V, ID = 6.0 A) • Built-in G-S protection diode against ESD 0.1 ±0.05 1 4 6.4 ±0.2 0.145 ±0.055 3.15 ±0.15 3.0 ±0.1 ORDERING INFORMATION PART NUMBER PACKAGE µPA1807GR-9JG Power TSSOP8 0.65 0.27 +0.03 –0.08 Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (pulse) Note1 Total Power Dissipation Note2 4.4 ±0.1 1.0 ±0.2 0.1 0.8 MAX. 0.10 M EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain Current (DC) (TA = 25°C) 0.5 0.6 +0.15 –0.1 ID(DC) ±12 A ID(pulse) ±48 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G16249EJ1V0DS00 (1st edition) Date Published August 2002 NS CP(K) Printed in Japan © 2002 µPA1807 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1.0 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1.0 mA 1.5 2.0 2.5 V | yfs | VDS = 10 V, ID = 6.0 A 7.0 15 RDS(on)1 VGS = 10 V, ID = 6.0 A 8.1 10 mΩ RDS(on)2 VGS = 4.5 V, ID = 6.0 A 10.5 14 mΩ RDS(on)3 VGS = 4.0 V, ID = 6.0 A 12 16 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 1000 pF Output Capacitance Coss VGS = 0 V 390 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 140 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 6.0 A 16 ns tr VGS = 10 V 11 ns td(off) RG = 10 Ω 46 ns 11.5 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 24 V 19 nC Gate to Source Charge QGS VGS = 10 V 3.1 nC Gate to Drain Charge QGD ID = 12 A 5.0 nC VF(S-D) IF = 12 A, VGS = 0 V 0.82 V Reverse Recovery Time trr IF = 12 A, VGS = 0 V 32 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 24 nC Body Diode Forward Voltage TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG PG. VGS VGS Wave Form 0 PG. 90% 90% ID VGS 0 ID 10% 0 10% Wave Form τ τ = 1 µs Duty Cycle ≤ 1% tr td(off) td(on) ton RL 50 Ω VDD 90% VDD ID 2 VGS 10% IG = 2 mA tf toff Data Sheet G16249EJ1V0DS µPA1807 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 120 2.5 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 Mounted on ceramic substrate 2 of 5000 mm x 1.1 mm 2 Mounted on FR-4 board 2 of 2500 mm x 1.6 mm 1.5 1 0.5 0 0 0 25 50 75 100 125 150 175 0 TA - Ambient Temperature - °C 25 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID(pulse) PW = 1 ms ID(DC) 10 1 R DS(on) Limited (V GS = 10 V) 10 ms DC 100 ms 0.1 0.01 Single pulse Mounted on ceramic substrate of 5000 mm 2 x 1.1 mm 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A 100 1000 Single pulse Mounted on FR-4 board of 2500 mm2 x 1.6 mm 125°C/W 100 Mounted on ceramic substrate 2 of 5000 mm x 1.1 mm 62.5°C/W 10 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16249EJ1V0DS 3 µPA1807 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 100 4.5 V Pulsed 40 VGS = 10 V 30 20 10 1 T A = 125°C 75°C 25°C −25°C 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1 1.5 3.5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V ID = 1.0 mA 2.2 2 1.8 1.6 1.4 -50 0 50 100 100 150 V DS = 10 V Pulsed 10 T A = −25°C 25°C 75°C 125°C 1 0.1 0.01 0.1 Tch - Channel Temperature - °C DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 20 ID = 6.0 A Pulsed 16 VGS = 4.0 V 4.5 V 12 10 V 8 4 0 0 50 100 1 10 100 ID - Drain Current - A 150 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 3 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 1.2 Tch - Channel Temperature - °C 4 2.5 VGS - Gate to Source Voltage - V 2.4 -50 2 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S 0 VGS(off) - Gate Cut-off Voltage - V V DS = 10 V Pulsed 10 4.0 V ID - Drain Current - A ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 Pulsed 16 12 ID = 6.0 A 8 4 0 0 2 4 6 8 VGS - Gate to Source Voltage - V Data Sheet G16249EJ1V0DS 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 20 10000 Pulsed Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ µPA1807 16 VGS = 4.0 V 12 4.5 V 8 10 V 4 0 0.01 V GS = 0 V f = 1.0 MHz 1000 C iss C oss 100 C rss 10 0.1 1 10 100 0.1 ID - Drain Current - A SWITCHING CHARACTERISTICS 10 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10000 100 Pulsed V DD = 15 V V GS = 10 V R G = 10 Ω 1000 IF - Diode Forward Current - A td(on), tr, td(off), tf - Switching Time - ns 1 VDS - Drain to Source Voltage - V tf 100 td(off) t d(on) 10 10 1 V GS = 0 V 0.1 tr 1 0.01 0.01 0.1 1 10 100 ID - Drain Current - A 0.5 0.6 0.7 0.8 0.9 1 VF(S-D) - Source to Drain Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS VGS - Gate to Source Voltage - V 10 ID = 12 A 8 VDD = 24 V 15 V 6.0 V 6 4 2 0 0 5 10 15 20 QG - Gate Charge - nC Data Sheet G16249EJ1V0DS 5 µPA1807 • The information in this document is current as of August, 2002. 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