NEC UPA1807GR-9JG

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1807
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The µPA1807 is a switching device, which can be driven
directly by a 4.0 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as DC/DC converters and power
management of notebook computers and so on.
8
5
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
1.2 MAX.
1.0 ±0.05
0.25
FEATURES
3° +5°
–3°
• 4.0 V drive available
• Low on-state resistance
RDS(on)1 = 10 mΩ MAX. (VGS = 10 V, ID = 6.0 A)
RDS(on)2 = 14 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A)
RDS(on)3 = 16 mΩ MAX. (VGS = 4.0 V, ID = 6.0 A)
• Built-in G-S protection diode against ESD
0.1 ±0.05
1
4
6.4 ±0.2
0.145 ±0.055
3.15 ±0.15
3.0 ±0.1
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1807GR-9JG
Power TSSOP8
0.65
0.27 +0.03
–0.08
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (pulse)
Note1
Total Power Dissipation
Note2
4.4 ±0.1
1.0 ±0.2
0.1
0.8 MAX.
0.10 M
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain Current (DC) (TA = 25°C)
0.5
0.6 +0.15
–0.1
ID(DC)
±12
A
ID(pulse)
±48
A
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2
2. Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16249EJ1V0DS00 (1st edition)
Date Published August 2002 NS CP(K)
Printed in Japan
©
2002
µPA1807
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1.0
µA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
µA
VGS(off)
VDS = 10 V, ID = 1.0 mA
1.5
2.0
2.5
V
| yfs |
VDS = 10 V, ID = 6.0 A
7.0
15
RDS(on)1
VGS = 10 V, ID = 6.0 A
8.1
10
mΩ
RDS(on)2
VGS = 4.5 V, ID = 6.0 A
10.5
14
mΩ
RDS(on)3
VGS = 4.0 V, ID = 6.0 A
12
16
mΩ
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
S
Input Capacitance
Ciss
VDS = 10 V
1000
pF
Output Capacitance
Coss
VGS = 0 V
390
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
140
pF
Turn-on Delay Time
td(on)
VDD = 15 V, ID = 6.0 A
16
ns
tr
VGS = 10 V
11
ns
td(off)
RG = 10 Ω
46
ns
11.5
ns
Rise Time
Turn-off Delay Time
Fall Time
tf
Total Gate Charge
QG
VDD = 24 V
19
nC
Gate to Source Charge
QGS
VGS = 10 V
3.1
nC
Gate to Drain Charge
QGD
ID = 12 A
5.0
nC
VF(S-D)
IF = 12 A, VGS = 0 V
0.82
V
Reverse Recovery Time
trr
IF = 12 A, VGS = 0 V
32
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
24
nC
Body Diode Forward Voltage
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
RL
RG
PG.
VGS
VGS
Wave Form
0
PG.
90%
90%
ID
VGS
0
ID
10%
0 10%
Wave Form
τ
τ = 1 µs
Duty Cycle ≤ 1%
tr td(off)
td(on)
ton
RL
50 Ω
VDD
90%
VDD
ID
2
VGS
10%
IG = 2 mA
tf
toff
Data Sheet G16249EJ1V0DS
µPA1807
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
2.5
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
Mounted on ceramic substrate
2
of 5000 mm x 1.1 mm
2
Mounted on FR-4 board
2
of 2500 mm x 1.6 mm
1.5
1
0.5
0
0
0
25
50
75
100
125
150
175
0
TA - Ambient Temperature - °C
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
ID(pulse)
PW = 1 ms
ID(DC)
10
1
R DS(on) Limited
(V GS = 10 V)
10 ms
DC
100 ms
0.1
0.01
Single pulse
Mounted on ceramic substrate
of 5000 mm 2 x 1.1 mm
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(ch-A) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
100
1000
Single pulse
Mounted on FR-4 board
of 2500 mm2 x 1.6 mm
125°C/W
100
Mounted on ceramic substrate
2
of 5000 mm x 1.1 mm
62.5°C/W
10
1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G16249EJ1V0DS
3
µPA1807
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50
100
4.5 V
Pulsed
40
VGS = 10 V
30
20
10
1
T A = 125°C
75°C
25°C
−25°C
0.1
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1
1.5
3.5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
VDS = 10 V
ID = 1.0 mA
2.2
2
1.8
1.6
1.4
-50
0
50
100
100
150
V DS = 10 V
Pulsed
10
T A = −25°C
25°C
75°C
125°C
1
0.1
0.01
0.1
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
ID = 6.0 A
Pulsed
16
VGS = 4.0 V
4.5 V
12
10 V
8
4
0
0
50
100
1
10
100
ID - Drain Current - A
150
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
3
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.2
Tch - Channel Temperature - °C
4
2.5
VGS - Gate to Source Voltage - V
2.4
-50
2
VDS - Drain to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
0
VGS(off) - Gate Cut-off Voltage - V
V DS = 10 V
Pulsed
10
4.0 V
ID - Drain Current - A
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
16
12
ID = 6.0 A
8
4
0
0
2
4
6
8
VGS - Gate to Source Voltage - V
Data Sheet G16249EJ1V0DS
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
20
10000
Pulsed
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
µPA1807
16
VGS = 4.0 V
12
4.5 V
8
10 V
4
0
0.01
V GS = 0 V
f = 1.0 MHz
1000
C iss
C oss
100
C rss
10
0.1
1
10
100
0.1
ID - Drain Current - A
SWITCHING CHARACTERISTICS
10
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10000
100
Pulsed
V DD = 15 V
V GS = 10 V
R G = 10 Ω
1000
IF - Diode Forward Current - A
td(on), tr, td(off), tf - Switching Time - ns
1
VDS - Drain to Source Voltage - V
tf
100
td(off)
t d(on)
10
10
1
V GS = 0 V
0.1
tr
1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
0.5
0.6
0.7
0.8
0.9
1
VF(S-D) - Source to Drain Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
VGS - Gate to Source Voltage - V
10
ID = 12 A
8
VDD = 24 V
15 V
6.0 V
6
4
2
0
0
5
10
15
20
QG - Gate Charge - nC
Data Sheet G16249EJ1V0DS
5
µPA1807
• The information in this document is current as of August, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
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written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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M8E 00. 4