Si6467DQ Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.014 @ VGS = - 4.5 V "8.0 0.019 @ VGS = - 2.5 V "7.0 0.027 @ VGS = - 1.8 V "5.8 S* TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D Si6467DQ G *Source Pins 2, 3, 6 and 7 must be tied common 6 S 5 D Top View D ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Symbol Limit Drain-Source Voltage Parameter VDS - 12 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a, b TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b TA = 25_C Maximum Power Dissipationa, b TA = 70_C Operating Junction and Storage Temperature Range Unit V "8.0 ID "6.5 IDM "30 IS - 1.5 A 1.5 PD W 1.0 TJ, Tstg _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Symbol Typical t v 10 sec Steady State Maximum 83 RthJA 90 Unit _C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 70829 S-59526—Rev. A, 19 Oct-98 www.vishay.com 2-1 Si6467DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = - 250 mA - 0.45 Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Typ Max Unit Static Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea rDS(on) V "100 VDS = - 9.6 V, VGS = 0 V -1 VDS = - 9.6 V, VGS = 0 V, TJ = 70_C - 25 VDS w - 5 V, VGS = - 4.5 V - 20 nA mA A VGS = - 4.5 V, ID = - 8.0 A 0.0105 0.014 VGS = - 2.5 V, ID = - 7.0 A 0.014 0.019 VGS = - 1.8 V, ID = - 5.8 A 0.020 0.027 gfs VDS = - 5 V, ID = - 8.0 A 34 VSD IS = - 1.5 A, VGS = 0 V 0.65 - 1.1 49 80 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = - 6 V, VGS = - 4.5 V, ID = - 8.0 A 9 nC Gate-Drain Charge Qgd 6.5 Turn-On Delay Time td(on) 40 70 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = - 6 V, RL = 6 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W IF = - 1.5 A, di/dt = 100 A/ms 50 100 220 400 105 200 70 120 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2-2 Document Number: 70829 S-59526—Rev. A, 19 Oct-98 Si6467DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 VGS = 5 thru 2 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 18 1.5 V 12 6 18 12 TC = 125_C 6 25_C 1V - 55_C 0 0 2 4 6 8 10 0 0.0 12 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.0 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 0.05 10000 0.04 8000 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 1.5 0.03 VGS = 1.8 V 0.02 VGS = 2.5 V Ciss 6000 4000 Coss 2000 0.01 VGS = 4.5 V Crss 0.00 0 0 6 12 18 24 30 0 2 6 8 10 12 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Gate Charge On-Resistance vs. Junction Temperature 4.5 1.4 VDS = 6 V ID = 8.0 A 3.6 r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 4 2.7 1.8 0.9 0.0 0 10 20 30 Qg - Total Gate Charge (nC) Document Number: 70829 S-59526—Rev. A, 19 Oct-98 40 50 VGS = 4.5 V ID = 8.0 A 1.2 VGS = 1.8 V ID = 5.8 A 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 2-3 Si6467DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.10 30 0.08 r DS(on) - On-Resistance ( W ) I S - Source Current (A) TJ = 150_C 10 TJ = 25_C 0.06 0.04 ID = 8.0 A 0.02 0.00 1 0.00 0.2 0.4 0.6 1.0 0.8 0 1.2 VSD - Source-to-Drain Voltage (V) 2 6 8 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.5 60 ID = 250 mA 0.4 50 0.3 40 Power (W) V GS(th) Variance (V) 4 0.2 0.1 30 20 0.0 10 - 0.1 - 0.2 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 TJ - Temperature (_C) 10 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90_C/W 0.02 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 2-4 Document Number: 70829 S-59526—Rev. A, 19 Oct-98