VISHAY 2N5432

2N5432/5433/5434
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
VGS(off) (V)
rDS(on) Max ()
ID(off) Typ (pA)
tON Typ (ns)
2N5432
–4 to –10
5
10
2.5
2N5433
–3 to –9
7
10
2.5
2N5434
–1 to –4
10
10
2.5
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
Low On-Resistance: 2N5432 <5 Fast Switching—tON: 2.5 ns
High Off-Isolation—I D(off): 10 pA
Low Capacitance: 11 pF
Low Insertion Loss
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response
Eliminates Additional Buffering
Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
DESCRIPTION
The 2N5432/5433/5434 are suitable for high-performance
analog switching and amplifier applications. Breakdown
voltage characteristics, low on-resistance, and very fast
switching make these devices are ideal for a wide range of
applications.
The hermetically-sealed TO-206AC (TO-52) package is
suitable for processing per MIL-S-19500 (see Military
Information). For similar products in TO-236 (SOT-23) or
TO-226AA (TO-92) packages, see the J/SST108 series data
sheet.
TO-206AC
(TO-52)
S
1
2
3
D
G and Case
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Lead Temperature
(1/16”
from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Document Number: 70245
S-04028—Rev. F, 04-Jun-01
Notes
a. Derate 2.4 mW/_C above 25_C
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7-1
2N5432/5433/5434
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5432
Parameter
Symbol
Test Conditions
V(BR)GSS
IG = –1 A , VDS = 0 V
VGS(off)
VDS = 5 V, ID = 3 nA
Typa Min
Max
2N5433
Min
Max
2N5434
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
–32
Gate Operating
Currentc
Drain Cutoff Current
–25
–25
V
IDSS
–4
VDS = 15 V, VGS = 0 V
IGSS
IG
ID(off)
Drain-Source On-Voltage
VDS(on)
Drain-Source On-Resistance
rDS(on)
Gate-Source Forward Voltagec
VGS(F)
TA = 150_C
–10
150
VGS = –15 V, VDS = 0 V
Gate Reverse Current
–25
–3
–9
100
–1
–4
30
mA
–5
–200
–200
–200
pA
–10
–200
–200
–200
nA
VDG = 10 V, ID = 10 mA
–10
VDS = 5 V, VGS = –10 V
10
200
200
200
20
200
200
200
nA
50
70
100
mV
5
7
10
TA = 150_C
VGS = 0 V, ID = 10 mA
2
IG = 1 mA , VDS = 0 V
pA
0.7
V
17
mS
600
S
Dynamic
Common-Source
Forward Transconductancec
gfs
Common-Source
Output Conductancec
gos
Drain-Source On-Resistance
rds(on)
Common-Source
Input Capacitance
Ciss
Common-Source
Reverse Transfer Capacitance
Crss
Equivalent Input
Noise Voltagec
en
VDS = 5 V, ID = 10 mA
f = 1 kHz
VGS = 0 V, ID = 0 mA
f = 1 kHz
VDS = 0 V, VGS = –10 V
f = 1 MHz
VDS = 5 V, ID = 10 mA
f = 1 kHz
5
7
10
20
30
30
30
11
15
15
15
pF
nV⁄
√Hz
3.5
Switching
Turn-On Timeb
Turn-Off
Timeb
td(on)
2
4
4
4
tr
0.5
1
1
1
4
6
6
6
18
30
30
30
td(off)
VDD = 1.5 V, VGS(H) = 0 V
See Switching Circuit
tf
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 s duty cycle v3%.
c. This parameter not registered with JEDEC.
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7-2
ns
NIP
Document Number: 70245
S-04028—Rev. F, 04-Jun-01
2N5432/5433/5434
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
rDS
600
IDSS
8
400
4
200
0
gfs – Forward Transconductance (mS)
800
–4
–8
–6
VGS(off) – Gate-Source Cutoff Voltage (V)
160
120
20
gos
40
10
0
0
–2
–4
–6
–8
VGS(off) – Gate-Source Cutoff Voltage (V)
Output Characteristics
100
VGS(off) = –2 V
VGS(off) = –4 V
80
60
ID – Drain Current (mA)
80
VGS = 0 V
–0.2 V
40
–0.4 V
–0.6 V
20
VGS = 0 V
60
–0.5 V
40
–1.0 V
–1.5 V
20
–0.8 V
–0.2 V
0
0
0
2
6
8
4
VDS – Drain-Source Voltage (V)
10
0
0.3
0.4
0.1
0.2
VDS – Drain-Source Voltage (V)
Turn-On Switching
0.5
Turn-Off Switching
5
30
td(off) independent
of device VGS(off)
VDD = 1.5 V, VGS(L) = –10 V
tr approximately independent of ID
VDD = 1.5 V, RG = 50 VGS(L) = –10 V
td(on)
3
24
Switching Time (ns)
4
Switching Time (ns)
–10
Output Characteristics
100
ID – Drain Current (mA)
30
gfs
80
–10
–2
40
0
0
0
50
gfs and gos @ VDS = 5 V
VGS = 0 V, f = 1 kHz
gos – Output Conductance (S)
16
12
200
1000
rDS @ ID = 10 mA, VGS = 0 V
IDSS @ VDS = 15 V, VGS = 0 V
IDSS – Saturation Drain Current (mA)
rDS(on) – Drain-Source On-Resistance ( Ω )
20
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
ID = 25 mA
ID = 10 mA
2
1
tf
18
VGS(off) = –8 V
12
td(off)
6
tr
0
VGS(off) = –2 V
0
0
–6
–8
–4
VGS(off) – Gate-Source Cutoff Voltage (V)
–2
Document Number: 70245
S-04028—Rev. F, 04-Jun-01
–10
0
5
10
15
ID – Drain Current (mA)
20
25
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7-3
2N5432/5433/5434
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
On-Resistance vs. Temperature
40
rDS(on) – Drain-Source On-Resistance ( Ω )
rDS(on) – Drain-Source On-Resistance ( Ω )
50
TA = 25_C
40
30
VGS(off) = –2 V
20
–4 V
10
–8 V
ID = 10 mA
rDS changes X 0.7%/_C
32
24
VGS(off) = –2 V
16
–4 V
–8 V
8
0
0
1
10
ID – Drain Current (mA)
–55
100
–35
–15
25
5
45
65
TA – Temperature (_C)
85
105
125
Gate Leakage Current
Capacitance vs. Gate-Source Voltage
100 nA
100
TA = 125_C
VDS = 0 V
f = 1 MHz
ID = 10 mA
80
10 nA
IG – Gate Leakage
Capacitance (pF)
5 mA
60
40
Ciss
1 mA
IGSS @ 125_C
100 pA
5 mA
TA = 25_C
10 pA
Crss
20
1 nA
1 mA
10 mA
IGSS @ 25_C
0
1 pA
0
–4
–8
–12
–16
0
–20
VGS – Gate-Source Voltage (V)
Noise Voltage vs. Frequency
12
16
20
Transconductance vs. Drain Current
100
VGS(off) = –4 V
Hz
gfs – Forward Transconductance (mS)
VDS = 5 V
en – Noise Voltage nV /
8
VDG – Drain-Gate Voltage (V)
100
10
ID = 10 mA
ID = 40 mA
TA = –55_C
25_C
10
125_C
VDS = 5 V
f = 1 kHz
1
1
10
100
1k
f – Frequency (Hz)
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4
10 k
100 k
1
10
100
ID – Drain Current (mA)
Document Number: 70245
S-04028—Rev. F, 04-Jun-01
2N5432/5433/5434
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Common Gate Input Admittance
Common Gate Forward Admittance
100
100
gig
–gfg
10
(mS)
(mS)
10
bfg
1
1
big
TA = 25_C
VDG = 20 V
ID = 20 mA
TA = 25_C
VDG = 20 V
ID = 20 mA
0.1
0.1
20
10
50
100
10
50
20
f – Frequency (MHz)
100
f – Frequency (MHz)
Common Gate Reverse Admittance
Common Gate Output Admittance
10
100
TA = 25_C
VDG = 20 V
ID = 20 mA
1.0
TA = 25_C
VDG = 20 V
ID = 20 mA
10
bog
(mS)
(mS)
–grg
–brg
gog
0.1
1
0.01
0.1
10
50
20
f – Frequency (MHz)
100
10
20
50
f – Frequency (MHz)
100
VDD
SWITCHING TIME TEST CIRCUIT
RL
2N5432
2N5433
2N5434
VGS(L)
–12 V
–12 V
–12 V
RL*
145 143 140 ID(on)
10 mA
10 mA
10 mA
OUT
VGS(H)
VGS(L)
1 kΩ
*Non-inductive
INPUT PULSE
SAMPLING SCOPE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Rise Time 0.4 ns
Input Resistance 10 M
Input Capacitance 1.5 pF
Document Number: 70245
S-04028—Rev. F, 04-Jun-01
51 Ω
VIN
Scope
51 Ω
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