2N/SST5460 Series Vishay Siliconix P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 2N/SST5461 1 to 7.5 40 1 –1 40 1.5 2N/SST5462 1.8 to 9 –2 40 2 –4 FEATURES BENEFITS APPLICATIONS D D D D D Low Signal Loss/System Error D High System Sensitivity D High-Quality Low-Level Signal Amplification D Low-Current, Low-Voltage Amplifiers D High-Side Switching D Ultrahigh Input Impedance Pre-Amplifiers High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 mA Low Capacitance: 1.2 pF Typical DESCRIPTION The 2N/SST5460 series are p-channel JFETs designed to provide all-around performance in a wide range of amplifier and analog switch applications. The 2N series, TO-226AA (TO-92), and SST series, TO-236 (SOT-23), plastic packages provide low cost options, and are available in tape-and-reel for automated assembly, (see Packaging Information). TO-226AA (TO-92) TO-236 (SOT-23) 1 S D 2 2N5460 2N5461 2N5462 D 3 S G 1 G SST5460 (B0)* SST5461 (B1)* SST5462 (B2)* *Marking Code for TO-236 2 3 Top View Top View ABSOLUTE MAXIMUM RATINGS Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Document Number: 70262 S-04030—Rev. D, 04-Jun-01 Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C www.vishay.com 9-1 2N/SST5460 Series Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N/SST5460 2N/SST5461 2N/SST5462 Symbol Test Conditions Typa V(BR)GSS IG = 10 mA , VDS = 0 V 55 VGS(off) VDS = –15 V, ID = –1 mA 0.75 6 1 7.5 1.8 9 Saturation Drain Currentb IDSS VDS = –15 V, VGS = 0 V –1 –5 –2 –9 –4 –16 mA Gate Reverse Current IGSS Parameter Min Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Drain Cutoff Current Gate-Source Voltage Gate-Source Forward Voltage 40 40 V VGS = 20 V, VDS = 0 V Gate Operating Current 40 TA = 100_C 0.003 5 5 5 nA 0.0003 1 1 1 mA IG VDG = –20 V, ID = –0.1 mA 3 ID(off) VDS = –15 V, VGS = 10 V –5 VGS VGS(F) VDS = –15 V ID = –0.1 mA 1.3 ID = –0.2 mA 2.3 ID = –0.4 mA 3.8 IG = –1 mA , VDS = 0 V pA 0.5 4 0.8 4.5 1.5 6 V 2 6 mS mS –0.7 Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Reverse Transfer Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Common-Source Output Capacitance Coss 1 VDS = –15 V, VGS = 0 V f = 1 kHz 2N 4.5 SST 4.5 VDS = –15 V, VGS = 0 V f = 1 MHz Equivalent Input Noise Voltage en VDS = –15 V, VGS = 0 V f = 100 Hz Noise Figure NF VDS = –15 V, VGS = 0 V f = 100 Hz, RG = 1 MW W BW = 1 Hz 9-2 1.5 5 75 75 75 7 7 7 1.2 2N 1.5 SST 1.5 2N 15 SST 15 2N 0.2 SST 0.2 pF 2 2 2 115 115 115 2.5 2.5 2.5 nV⁄ √Hz √ dB Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. www.vishay.com 4 PSCIB Document Number: 70262 S-04030—Rev. D, 04-Jun-01 2N/SST5460 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage gfs –12 IDSS 2.5 –8 gfs @ VDS = –15 V, VGS = 0 V IDSS @ VDS = –15 V, VGS = 0 V f = 1 kHz –4 0 0 0 2 4 6 8 1000 100 800 80 600 60 rDS 400 40 200 0 10 0 0 2 4 6 8 10 VGS(off) – Gate-Source Cutoff Voltage (V) Output Characteristics Output Characteristics –10 VGS(off) = 1.5 V VGS(off) = 3 V VGS = 0 V –1.6 0.2 V –1.2 0.4 V –8 I D – Drain Current (mA) I D – Drain Current (mA) 20 rDS @ ID = –100 mA, VGS = 0 V gos @ VDS = –15 V, VGS = 0 V f = 1 kHz VGS(off) – Gate-Source Cutoff Voltage (V) –2 gos g os– Output Conductance ( mS) –16 rDS(on) – Drain-Source On-Resistance ( Ω ) 5 gfs – Forward Transconductance (mS) IDSS – Saturation Drain Current (mA) –20 0.6 V –0.8 0.8 V –0.4 –6 VGS = 0 V 0.5 V –4 1.0 V 1.5 V –2 1.0 V 2.0 V 0 0 0 –4 –8 –12 –16 –20 0 –4 –8 –12 –16 –20 VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V) Output Characteristics Output Characteristics –2 –0.5 VGS(off) = 1.5 V 0.6 V I D – Drain Current (mA) 0.2 V 0.5 V –1.6 I D – Drain Current (mA) VGS = 0 V –0.4 VGS = 0 V VGS(off) = 3 V 0.4 V 0.8 V –0.3 –0.2 1.0 V 1.0 V –1.2 1.5 V –0.8 2.0 V –0.4 –0.1 1.2 V 2.5 V 0 0 0 –0.2 –0.4 –0.6 –0.8 VDS – Drain-Source Voltage (V) Document Number: 70262 S-04030—Rev. D, 04-Jun-01 –1 0 –0.2 –0.4 –0.6 –0.8 –1 VDS – Drain-Source Voltage (V) www.vishay.com 9-3 2N/SST5460 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transfer Characteristics Transfer Characteristics –5 –10 VGS(off) = 1.5 V VDS = –15 V VGS(off) = 3 V –8 I D – Drain Current (mA) I D – Drain Current (mA) –4 –3 TA = –55_C –2 25_C –1 –6 TA = –55_C –4 25_C –2 125_C 125_C 0 0 0 0.4 0.8 1.2 1.6 2 0 1 VGS – Gate-Source Voltage (V) 2 On-Resistance vs. Drain Current 5 Gate Leakage Current TA = 25_C –5 mA 1 nA 800 I G – Gate Leakage rDS(on) – Drain-Source On-Resistance ( Ω ) 4 10 nA VGS(off) = 1.5 V 600 3V 400 TA = 125_C 100 pA –1 mA IGSS @ 125_C 10 p A –0.1 mA –5 mA TA = 25_C 4V IGSS @ 25_C 1 pA 200 0 –0.1 0.1 pA –1 –10 0 –10 –20 –30 –40 –50 VDG – Drain-Gate Voltage (V) ID – Drain Current (mA) Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltage 5 5 VDS = –15 V f = 1 kHz VGS(off) = 3 V gfs – Forward Transconductance (mS) VGS(off) = 1.5 V gfs – Forward Transconductance (mS) 3 VGS – Gate-Source Voltage (V) 1000 4 TA = –55_C 3 2 25_C 1 125_C 0 VDS = –15 V f = 1 kHz 4 TA = –55_C 25_C 3 2 125_C 1 0 0 0.4 0.8 1.2 VGS – Gate-Source Voltage (V) www.vishay.com 9-4 VDS = –15 V 1.6 2 0 1 2 3 4 5 VGS – Gate-Source Voltage (V) Document Number: 70262 S-04030—Rev. D, 04-Jun-01 2N/SST5460 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Forward Transconductance vs. Drain Current Circuit Voltage Gain vs. Drain Current 100 10 VGS(off) = 3 V A V – Voltage Gain 60 gfs – Forward Transconductance (µS) VGS(off) = 1.5 V 80 VGS(off) = 3 V 40 20 Assume VDD = –15 V, VDS = –5 V g fs R L 10 V AV + RL + ID 1 ) R Lg os 0 –0.01 TA = –55_C 1 VDS = –15 V f = 1 kHz 0.1 –0.1 –1 –0.1 –10 ID – Drain Current (mA) Common-Source Input Capacitance vs. Gate-Source Voltage Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 5 C rss – Reverse Feedback Capacitance (pF) f = 1 MHz 8 6 4 –5 V 2 –15 V f = 1 MHz 2.5 –5 V –15 V 0 0 0 4 8 12 16 20 0 VGS – Gate-Source Voltage (V) 4 8 12 16 20 VGS – Gate-Source Voltage (V) Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current 100 20 VDS = –15 V gos – Output Conductance (µS) VGS(off) = 3 V Hz en – Noise Voltage nV / –1 ID – Drain Current (mA) 10 C iss – Input Capacitance (pF) 25_C 125_C ID = –0.1 mA 10 ID = –1 mA 1 10 100 1k f – Frequency (Hz) Document Number: 70262 S-04030—Rev. D, 04-Jun-01 10 k 100 k 16 TA = –55_C 12 25_C 8 125_C 4 0 –0.1 VDS = –15 V f = 1 kHz –1 –10 ID – Drain Current (mA) www.vishay.com 9-5