VISHAY 2N5462

2N/SST5460 Series
Vishay Siliconix
P-Channel JFETs
2N5460
2N5461
2N5462
SST5460
SST5461
SST5462
PRODUCT SUMMARY
Part Number
VGS(off) (V)
V(BR)GSS Min (V)
gfs Min (mS)
IDSS Min (mA)
2N/SST5460
0.75 to 6
2N/SST5461
1 to 7.5
40
1
–1
40
1.5
2N/SST5462
1.8 to 9
–2
40
2
–4
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D Low Signal Loss/System Error
D High System Sensitivity
D High-Quality Low-Level Signal
Amplification
D Low-Current, Low-Voltage Amplifiers
D High-Side Switching
D Ultrahigh Input Impedance
Pre-Amplifiers
High Input Impedance
Very Low Noise
High Gain: AV = 80 @ 20 mA
Low Capacitance: 1.2 pF Typical
DESCRIPTION
The 2N/SST5460 series are p-channel JFETs designed to
provide all-around performance in a wide range of amplifier
and analog switch applications.
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), plastic packages provide low cost options, and are
available in tape-and-reel for automated assembly, (see
Packaging Information).
TO-226AA
(TO-92)
TO-236
(SOT-23)
1
S
D
2
2N5460
2N5461
2N5462
D
3
S
G
1
G
SST5460 (B0)*
SST5461 (B1)*
SST5462 (B2)*
*Marking Code for TO-236
2
3
Top View
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
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9-1
2N/SST5460 Series
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N/SST5460
2N/SST5461
2N/SST5462
Symbol
Test Conditions
Typa
V(BR)GSS
IG = 10 mA , VDS = 0 V
55
VGS(off)
VDS = –15 V, ID = –1 mA
0.75
6
1
7.5
1.8
9
Saturation Drain Currentb
IDSS
VDS = –15 V, VGS = 0 V
–1
–5
–2
–9
–4
–16
mA
Gate Reverse Current
IGSS
Parameter
Min Max Min
Max Min
Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Drain Cutoff Current
Gate-Source Voltage
Gate-Source
Forward Voltage
40
40
V
VGS = 20 V, VDS = 0 V
Gate Operating Current
40
TA = 100_C
0.003
5
5
5
nA
0.0003
1
1
1
mA
IG
VDG = –20 V, ID = –0.1 mA
3
ID(off)
VDS = –15 V, VGS = 10 V
–5
VGS
VGS(F)
VDS = –15 V
ID = –0.1 mA
1.3
ID = –0.2 mA
2.3
ID = –0.4 mA
3.8
IG = –1 mA , VDS = 0 V
pA
0.5
4
0.8
4.5
1.5
6
V
2
6
mS
mS
–0.7
Dynamic
Common-Source
Forward Transconductance
gfs
Common-Source
Output Conductance
gos
Common-Source
Reverse Transfer
Capacitance
Ciss
Common-Source
Reverse Transfer
Capacitance
Crss
Common-Source
Output Capacitance
Coss
1
VDS = –15 V, VGS = 0 V
f = 1 kHz
2N
4.5
SST
4.5
VDS = –15 V, VGS = 0 V
f = 1 MHz
Equivalent Input
Noise Voltage
en
VDS = –15 V, VGS = 0 V
f = 100 Hz
Noise Figure
NF
VDS = –15 V, VGS = 0 V
f = 100 Hz, RG = 1 MW
W
BW = 1 Hz
9-2
1.5
5
75
75
75
7
7
7
1.2
2N
1.5
SST
1.5
2N
15
SST
15
2N
0.2
SST
0.2
pF
2
2
2
115
115
115
2.5
2.5
2.5
nV⁄
√Hz
√
dB
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
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4
PSCIB
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
2N/SST5460 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
gfs
–12
IDSS
2.5
–8
gfs @ VDS = –15 V, VGS = 0 V
IDSS @ VDS = –15 V, VGS = 0 V
f = 1 kHz
–4
0
0
0
2
4
6
8
1000
100
800
80
600
60
rDS
400
40
200
0
10
0
0
2
4
6
8
10
VGS(off) – Gate-Source Cutoff Voltage (V)
Output Characteristics
Output Characteristics
–10
VGS(off) = 1.5 V
VGS(off) = 3 V
VGS = 0 V
–1.6
0.2 V
–1.2
0.4 V
–8
I D – Drain Current (mA)
I D – Drain Current (mA)
20
rDS @ ID = –100 mA, VGS = 0 V
gos @ VDS = –15 V, VGS = 0 V
f = 1 kHz
VGS(off) – Gate-Source Cutoff Voltage (V)
–2
gos
g os– Output Conductance ( mS)
–16
rDS(on) – Drain-Source On-Resistance ( Ω )
5
gfs – Forward Transconductance (mS)
IDSS – Saturation Drain Current (mA)
–20
0.6 V
–0.8
0.8 V
–0.4
–6
VGS = 0 V
0.5 V
–4
1.0 V
1.5 V
–2
1.0 V
2.0 V
0
0
0
–4
–8
–12
–16
–20
0
–4
–8
–12
–16
–20
VDS – Drain-Source Voltage (V)
VDS – Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
–2
–0.5
VGS(off) = 1.5 V
0.6 V
I D – Drain Current (mA)
0.2 V
0.5 V
–1.6
I D – Drain Current (mA)
VGS = 0 V
–0.4
VGS = 0 V
VGS(off) = 3 V
0.4 V
0.8 V
–0.3
–0.2
1.0 V
1.0 V
–1.2
1.5 V
–0.8
2.0 V
–0.4
–0.1
1.2 V
2.5 V
0
0
0
–0.2
–0.4
–0.6
–0.8
VDS – Drain-Source Voltage (V)
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
–1
0
–0.2
–0.4
–0.6
–0.8
–1
VDS – Drain-Source Voltage (V)
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9-3
2N/SST5460 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
Transfer Characteristics
–5
–10
VGS(off) = 1.5 V
VDS = –15 V
VGS(off) = 3 V
–8
I D – Drain Current (mA)
I D – Drain Current (mA)
–4
–3
TA = –55_C
–2
25_C
–1
–6
TA = –55_C
–4
25_C
–2
125_C
125_C
0
0
0
0.4
0.8
1.2
1.6
2
0
1
VGS – Gate-Source Voltage (V)
2
On-Resistance vs. Drain Current
5
Gate Leakage Current
TA = 25_C
–5 mA
1 nA
800
I G – Gate Leakage
rDS(on) – Drain-Source On-Resistance ( Ω )
4
10 nA
VGS(off) = 1.5 V
600
3V
400
TA = 125_C
100 pA
–1 mA
IGSS @ 125_C
10 p A
–0.1 mA
–5 mA
TA = 25_C
4V
IGSS @ 25_C
1 pA
200
0
–0.1
0.1 pA
–1
–10
0
–10
–20
–30
–40
–50
VDG – Drain-Gate Voltage (V)
ID – Drain Current (mA)
Transconductance vs. Gate-Source Voltage
Transconductance vs. Gate-Source Voltage
5
5
VDS = –15 V
f = 1 kHz
VGS(off) = 3 V
gfs – Forward Transconductance (mS)
VGS(off) = 1.5 V
gfs – Forward Transconductance (mS)
3
VGS – Gate-Source Voltage (V)
1000
4
TA = –55_C
3
2
25_C
1
125_C
0
VDS = –15 V
f = 1 kHz
4
TA = –55_C
25_C
3
2
125_C
1
0
0
0.4
0.8
1.2
VGS – Gate-Source Voltage (V)
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9-4
VDS = –15 V
1.6
2
0
1
2
3
4
5
VGS – Gate-Source Voltage (V)
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
2N/SST5460 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Forward Transconductance
vs. Drain Current
Circuit Voltage Gain vs. Drain Current
100
10
VGS(off) = 3 V
A V – Voltage Gain
60
gfs – Forward Transconductance (µS)
VGS(off) = 1.5 V
80
VGS(off) = 3 V
40
20
Assume VDD = –15 V, VDS = –5 V
g fs R L
10 V
AV +
RL +
ID
1 ) R Lg os
0
–0.01
TA = –55_C
1
VDS = –15 V
f = 1 kHz
0.1
–0.1
–1
–0.1
–10
ID – Drain Current (mA)
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
5
C rss – Reverse Feedback Capacitance (pF)
f = 1 MHz
8
6
4
–5 V
2
–15 V
f = 1 MHz
2.5
–5 V
–15 V
0
0
0
4
8
12
16
20
0
VGS – Gate-Source Voltage (V)
4
8
12
16
20
VGS – Gate-Source Voltage (V)
Equivalent Input Noise Voltage vs. Frequency
Output Conductance vs. Drain Current
100
20
VDS = –15 V
gos – Output Conductance (µS)
VGS(off) = 3 V
Hz
en – Noise Voltage nV /
–1
ID – Drain Current (mA)
10
C iss – Input Capacitance (pF)
25_C
125_C
ID = –0.1 mA
10
ID = –1 mA
1
10
100
1k
f – Frequency (Hz)
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
10 k
100 k
16
TA = –55_C
12
25_C
8
125_C
4
0
–0.1
VDS = –15 V
f = 1 kHz
–1
–10
ID – Drain Current (mA)
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9-5