2N/SST5484 Series Vishay Siliconix N-Channel JFETs 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5484 –0.3 to –3 2N/SST5485 –0.5 to –4 –25 3 1 –25 3.5 2N/SST5486 –2 to –6 4 –25 4 8 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: Gps 13 dB (typ) @ 400 MHz – 5485/6 D Very Low Noise: 2.5 dB (typ) @ 400 MHz – 5485/6 D Very Low Distortion D High AC/DC Switch Off-Isolation D D D D D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches DESCRIPTION The 2N/SST5484 series consists of n-channel JFETs designed to provide high-performance amplification, especially at high frequencies up to and beyond 400 MHz. The 2N series, TO-226AA (TO-92), and SST series, TO-236 (SOT-23), packages provide low-cost options and are available with tape-and-reel to support automated assembly (see Packaging Information). TO-236 (SOT-23 ) TO-226AA (TO-92) D 1 D 1 S 2 S 2 G 3 3 Top View 2N5484 2N5485 2N5486 G Top View SST5484 (H4)* SST5485 (H5)* SST5486 (H6)* *Marking Code for TO-236 For applications information see AN102 and AN105. Document Number: 70246 S-04028—Rev. E, 04-Jun-01 www.vishay.com 7-1 2N/SST5484 Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C Notes a. Derate 2.8 mW/_C above 25_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW SPECIFICATIONS FOR 2N SERIES (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N5484 Parameter Symbol Test Conditions Typa V(BR)GSS IG = –1 A , VDS = 0 V –35 VGS(off) VDS = 15 V, ID = 10 nA Min –25 Max 2N5485 Min 2N5486 Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc Gate-Source Forward Voltagec IDSS IGSS TA = 100_C –25 V –0.3 VDS = 15 V, VGS = 0 V VGS = –20 V, VDS = 0 V –25 1 –3 –0.5 –4 –2 –6 5 4 10 8 20 –0.002 –1 –1 –1 –0.2 –200 –200 –200 mA nA IG VDG = 10 V, ID = 1 mA –20 pA VGS(F) IG = 10 mA , VDS = 0 V 0.8 V Dynamic Common-Source Forward Transconductanceb gfs Common-Source Output Conductanceb gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Common-Source Output Capacitance Coss Equivalent Input Noise Voltagec en 3 VDS = 15 V, VGS = 0 V f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 15 V, VGS = 0 V f = 100 Hz 6 3.5 7 4 8 mS S 50 60 75 2.2 5 5 5 0.7 1 1 1 1 2 2 2 pF nV⁄ √Hz 10 High-Frequency Common-Source Transconductance Yfs(RE) Common-Source Output Conductance Yos(RE) Common-Source Input Conductance Yis(RE) VDS = 15 V VGS = 0 V f = 100 MHz 5.5 f = 400 MHz 5.5 f = 100 MHz 45 f = 400 MHz 65 f = 100 MHz 0.05 f = 400 MHz 0.8 VDS = 15 V, ID = 1 mA f = 100 MHz Common-Source Power Gain Noise Figure Gps NF VDS = 15 V ID = 4 mA 7-2 3 mS 3.5 75 100 100 1 1 S 0.1 16 mS 25 f = 100 MHz 21 18 30 18 30 f = 400 MHz 13 10 20 10 20 VDS = 15 V, VGS = 0 V RG = 1 M , f = 1 kHz 0.3 2.5 VDS = 15 V, ID = 1 mA RG = 1 k , f = 100 MHz 2 3 VDS = 15 V ID = 4 mA RG = 1 k www.vishay.com 20 2.5 2.5 2.5 f = 100 MHz 1 2 2 f = 400 MHz 2.5 4 4 dB Document Number: 70246 S-04028—Rev. E, 04-Jun-01 2N/SST5484 Series Vishay Siliconix SPECIFICATIONS FOR SST SERIES (TA = 25_C UNLESS OTHERWISE NOTED) Limits SST5484 Parameter Symbol Test Conditions Typb V(BR)GSS IG = –1 A , VDS = 0 V –35 VGS(off) VDS = 15 V, ID = 10 nA Min –25 Max SST5485 Min Max SST5486 Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc Gate-Source Forward Voltagec IDSS IGSS –25 V –0.3 VDS = 15 V, VGS = 0 V VGS = –20 V, VDS = 0 V –25 1 –3 –0.5 –4 –2 –6 5 4 10 8 20 –0.002 –1 –1 –1 –0.2 –200 –200 –200 TA = 100_C mA nA IG VDG = 10 V, ID = 1 mA –20 pA VGS(F) IG = 10 mA , VDS = 0 V 0.8 V Dynamic Common-Source Forward Transconductanceb gfs Common-Source Output Conductanceb gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Common-Source Output Capacitance Coss Equivalent Input Noise Voltagec en 3 VDS = 15 V, VGS = 0 V f = 1 kHz 6 50 3.5 7 60 4 8 mS 75 S 2.2 VDS = 15 V, VGS = 0 V f = 1 MHz 0.7 pF 1 VDS = 15 V, VGS = 0 V f = 100 Hz 10 nV⁄ √Hz High-Frequency Common-Source Transconductance Yfs Common-Source Output Conductance Yos Common-Source Input Conductance Yis Common-Source Power Gain Noise Figure VDS = 15 V VGS = 0 V f = 100 MHz 5.5 f = 400 MHz 5.5 f = 100 MHz 45 f = 400 MHz 65 f = 100 MHz 0.05 f = 400 MHz 0.8 VDS = 15 V, ID = 1 mA f = 100 MHz Gps NF VDS = 15 V ID = 4 mA f = 100 MHz 21 f = 400 MHz 13 0.3 VDS = 15 V, ID = 1 mA RG = 1 k , f = 100 MHz 2 f = 100 MHz 1 f = 400 MHz 2.5 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 s duty cycle v3%. c. This parameter not registered with JEDEC. Document Number: 70246 S-04028—Rev. E, 04-Jun-01 S mS 20 VDS = 15 V, VGS = 0 V RG = 1 M , f = 1 kHz VDS = 15 V ID = 4 mA RG = 1 k mS dB NH www.vishay.com 7-3 2N/SST5484 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 10 8 6 gfs 12 4 8 IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 4 2 rDS(on) – Drain-Source On-Resistance ( Ω ) 16 0 0 0 –2 –4 –6 –8 VGS(off) – Gate-Source Cutoff Voltage (V) rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 400 rDS 300 200 40 100 20 0 0 –10 0 –2 –4 –6 –8 VGS(off) – Gate-Source Cutoff Voltage (V) –10 Common-Source Forward Transconductance vs. Drain Current 10 100 nA ID = 5 mA gfs – Forward Transconductance (mS) VGS(off) = –3 V 1 mA 10 nA 0.1 mA IG – Gate Leakage 60 gos Gate Leakage Current TA = 125_C 1 nA 100 pA IGSS @ 125_C ID = 5 mA 1 mA 10 pA 0.1 mA TA = 25_C 1 pA IGSS @ 25_C 0.1 pA VDS = 10 V f = 1 kHz 8 TA = –55_C 6 25_C 4 125_C 2 0 0 4 8 12 16 VDG – Drain-Gate Voltage (V) 0.1 20 1 ID – Drain Current (mA) Output Characteristics 10 Output Characteristics 10 15 VGS(off) = –2 V VGS(off) = –3 V 8 12 VGS = 0 V ID – Drain Current (mA) ID – Drain Current (mA) 80 gos – Output Conductance (µS) IDSS 100 500 gfs – Forward Transconductance (mS) IDSS – Saturation Drain Current (mA) 20 –0.2 V 6 –0.4 V 4 –0.6 V –0.8 V –0.3 V 9 –0.6 V –0.9 V 6 –1.2 V –1.5 V –1.0 V –1.2 V 2 VGS = 0 V 3 –1.8 V 0 0 2 4 6 –1.4 V 8 VDS – Drain-Source Voltage (V) www.vishay.com 7-4 10 0 0 2 4 6 8 10 VDS – Drain-Source Voltage (V) Document Number: 70246 S-04028—Rev. E, 04-Jun-01 2N/SST5484 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transfer Characteristics Transfer Characteristics 10 10 VGS(off) = –2 V VDS = 10 V VGS(off) = –3 V 8 ID – Drain Current (mA) ID – Drain Current (mA) 8 TA = –55_C 25_C 6 125_C 4 TA = –55_C 25_C 6 125_C 4 2 2 0 0 0 –0.4 –0.8 –1.2 –1.6 VGS – Gate-Source Voltage (V) 0 –2 Transconductance vs. Gate-Source Voltage –1.2 –1.8 –2.4 VGS – Gate-Source Voltage (V) –3 Transconductance vs. Gate-Source Voltage VDS = 10 V f = 1 kHz VGS(off) = –3 V gfs – Forward Transconductance (mS) VGS(off) = –2 V gfs – Forward Transconductance (mS) –0.6 10 10 8 TA = –55_C 6 25_C 4 125_C 2 VDS = 10 V f = 1 kHz 8 TA = –55_C 6 25_C 4 125_C 2 0 0 0 –0.4 –0.8 –1.2 –1.6 –2 0 VGS – Gate-Source Voltage (V) –0.6 –1.2 –1.8 –2.4 –3 VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current 300 100 g fs R L AV + 1 ) R g L os TA = 25_C 240 80 VGS(off) = –2 V AV – Voltage Gain rDS(on) – Drain-Source On-Resistance ( Ω ) VDS = 10 V 180 –3 V 120 60 Assume VDD = 15 V, VDS = 5 V RL + 60 40 10 V ID VGS(off) = –2 V 20 –3 V 0 0.1 Document Number: 70246 S-04028—Rev. E, 04-Jun-01 0 1 ID – Drain Current (mA) 10 0.1 1 ID – Drain Current (mA) 10 www.vishay.com 7-5 2N/SST5484 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 3 5 Crss – Reverse Feedback Capacitance (pF) Ciss – Input Capacitance (pF) f = 1 MHz 4 3 VDS = 0 V 2 10 V 1 f = 1 MHz 2.4 1.8 VDS = 0 V 1.2 10 V 0.6 0 0 0 –4 –8 –12 –16 VGS – Gate-Source Voltage (V) 0 –20 –4 Input Admittance –8 –12 –16 VGS – Gate-Source Voltage (V) Forward Admittance 100 100 TA = 25_C VDS = 15 V VGS = 0 V Common Source TA = 25_C VDS = 15 V VGS = 0 V Common Source bis 10 10 gfs (mS) (mS) gis 1 –bfs 1 0.1 100 200 500 0.1 100 1000 f – Frequency (MHz) 200 500 1000 f – Frequency (MHz) Reverse Admittance 10 –20 Output Admittance 10 TA = 25_C VDS = 15 V VGS = 0 V Common Source TA = 25_C VDS = 15 V VGS = 0 V Common Source –brs bos 1 (mS) (mS) 1 –grs 0.1 0.1 gos 0.01 100 www.vishay.com 7-6 0.01 200 500 f – Frequency (MHz) 1000 100 200 500 f – Frequency (MHz) 1000 Document Number: 70246 S-04028—Rev. E, 04-Jun-01 2N/SST5484 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) 20 Equivalent Input Noise Voltage vs. Frequency VDS = 10 V VGS(off) = –3 V 16 gos – Output Conductance (µS) en – Noise Voltage nV / Hz VGS(off) = –3 V Output Conductance vs. Drain Current 20 12 8 ID = 5 mA 4 VDS = 10 V f = 1 kHz 16 TA = –55_C 12 25_C 8 125_C 4 ID = IDSS 0 0 10 100 1k f – Frequency (Hz) Document Number: 70246 S-04028—Rev. E, 04-Jun-01 10 k 100 k 0.1 1 10 ID – Drain Current (mA) www.vishay.com 7-7