APT47N60BC3(G) APT47N60SC3(G) 600V 47A 0.070Ω Super Junction MOSFET TO -24 7 D 3 PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated • Popular TO-247 or Surface Mount D3 package. G • RoHS Compliant S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT47N60BC3_SC3(G) UNIT 600 Volts Drain-Source Voltage 47 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±20 Gate-Source Voltage Transient ±30 Total Power Dissipation @ TC = 25°C 417 Watts Linear Derating Factor 3.33 W/°C VGSM PD TJ,TSTG TL dv /dt 141 Operating and Storage Junction Temperature Range 7 EAR Repetitive Avalanche Energy 7 Single Pulse Avalanche Energy °C 260 Drain-Source Voltage slope (VDS = 480V, ID = 47A, TJ = 125°C) Repetitive Avalanche Current EAS -55 to 150 Lead Temperature: 0.063" from Case for 10 Sec. IAR Volts 50 V/ns 20 Amps 1 4 mJ 1800 STATIC ELECTRICAL CHARACTERISTICS BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) Drain-Source On-State Resistance 2 TYP 600 (VGS = 10V, ID = 30A) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 0.06 0.07 0.5 25 Ohms μA 250 Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) 2.10 3 ±100 nA 3.9 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - http://www.microsemi.com UNIT Volts Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TJ = 150°C) Gate Threshold Voltage (VDS = VGS, ID = 2.7mA) MAX 050-7144 Rev F 3-2012 Symbol DYNAMIC CHARACTERISTICS Symbol APT47N60BC3_SC3(G) Characteristic Test Conditions Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time 29 ID = 47A @ 25°C 18 VGS = 13V 27 VDD = 380V RG = 1.8Ω Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 8 INDUCTIVE SWITCHING @ 25°C 6 670 VDD = 400V, VGS = 15V 6 ns 110 ID = 47A @ 125°C Fall Time nC 110 RESISTIVE SWITCHING Turn-off Delay Time pF 260 VDD = 300V Rise Time UNIT 210 VGS = 10V Qgd tf 2565 f = 1 MHz 3 MAX 7015 VGS = 0V Gate-Source Charge td(off) TYP VDS = 25V Qgs tr MIN ID = 47A, RG = 5Ω 980 INDUCTIVE SWITCHING @ 125°C 1100 VDD = 400V VGS = 15V ID = 47A, RG = 5Ω μJ 1200 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions MIN ISM Pulsed Source Current VSD Diode Forward Voltage 2 (Body Diode) 141 (VGS = 0V, IS = - 47A) 1.2 t rr Reverse Recovery Time (IS = -47A, dl S/dt = 100A/μs, VR = 350V) Q rr Reverse Recovery Charge (IS = -47A, dl S/dt = 100A/μs, VR = 350V) /dt Peak Diode Recovery dv /dt MAX 47 Continuous Source Current (Body Diode) 1 dv TYP 580 Amps Volts ns μC 23 5 UNIT 6 V/ns THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.30 62 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.25 0.7 0.20 0.5 Note: 0.10 0.3 0.05 0.1 P DM Z JC, THERMAL IMPEDANCE (°C/W) θ 3-2012 050-7144 Rev F 0.9 0.15 SINGLE PULSE 0 10-5 t1 t2 t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 0.05 10-4 °C/W 4 Starting Tj = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID47A di/dt ≤ 700A/μs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f Microsemi Reserves the right to change, without notice, the specifications and information contained 0.35 0.30 UNIT 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves ID, DRAIN CURRENT (AMPERES) 180 APT47N60BC3_SC3(G) VGS =15 & 10V 6.5V 160 140 6V 120 100 5.5V 80 5V 60 40 4.5V 20 4V 100 80 TJ = -55°C 60 TJ = +25°C 40 TJ = +125°C 20 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 5, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 3 GS 1.30 = 10V @ 23.5A 1.20 1.10 VGS=10V 1.00 VGS=20V 0.90 0.80 0 10 20 30 40 50 60 70 80 90 ID, DRAIN CURRENT (AMPERES) FIGURE 4, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 6, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 D V GS ID, DRAIN CURRENT (AMPERES) (NORMALIZED) NORMALIZED TO V I = 47A = 10V 2.5 2.0 1.5 1.0 0.5 0 -50 1.40 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, ON-RESISTANCE vs. TEMPERATURE 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, THRESHOLD VOLTAGE vs TEMPERATURE 050-7144 Rev F 3-2012 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 0 1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 120 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, LOW VOLTAGE OUTPUT CHARACTERISTICS Typical Performance Curves 50 100μS 10 5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Ciss 1,000 Coss 100 Crss 10mS 1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 9, MAXIMUM SAFE OPERATING AREA 16 I = 47A D 12 VDS= 120V 8 10,000 1mS TC =+25°C TJ =+150°C SINGLE PULSE 1 C, CAPACITANCE (pF) 100 APT47N60BC3_SC3(G) 30,000 OPERATION HERE LIMITED BY R (ON) DS VDS= 300V VDS= 480V 4 0 0 50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 11, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 10 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 188 200 100 TJ =+150°C TJ =+25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 12, SOURCE-DRAIN DIODE FORWARD VOLTAGE 120 350 V DD 250 V DD R 200 G 100 0 10 20 30 40 50 60 70 80 ID (A) FIGURE 14, RISE AND FALL TIMES vs CURRENT 0 10 2000 G V = 400V Eoff = 5Ω T = 125°C J L = 100μH EON includes diode reverse recovery. 1500 1000 500 Eon 0 10 SWITCHING ENERGY (μJ) DD SWITCHING ENERGY (μJ) tr 40 20 30 4500 R 3-2012 60 0 40 50 60 70 80 ID (A) FIGURE 13, DELAY TIMES vs CURRENT V 050-7144 Rev F tf T = 125°C J L = 100μH td(on) 2500 0 = 400V = 5Ω 20 50 0 G 80 = 400V = 5Ω T = 125°C J L = 100μH 150 R 100 td(off) tr and tf (ns) td(on) and td(off) (ns) 300 DD = 400V 4000 I = 47A 3500 T = 125°C J L = 100μH Eoff D EON includes 3000 diode reverse recovery. 2500 2000 1500 Eon 1000 500 20 30 40 50 60 70 80 ID (A) FIGURE 15, SWITCHING ENERGY vs CURRENT 0 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 16, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves 10% APT47N60BC3_SC3(G) 90% Gate Voltage Gate Voltage TJ = 125 C TJ = 125 C td(on) td(off) 90% Collector Current 90% 5% tf Collector Current tr 10% 5% Switching Energy 0 Collector Voltage Switching Energy Collector Voltage 10% Figure 18, Turn-off Switching Waveforms and Definitions Figure 17, Turn-on Switching Waveforms and Definitions APT30DF60 IC V DD V CE G D.U.T. Figure Figure19, 20,Inductive InductiveSwitching SwitchingTest TestCircuit Circuit D3PAK Package Outline TO-247 (B) Package Outline e1 SAC: Tin, Silver, Copper 15.49 (.610) 16.26 (.640) Drai n 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drai n (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) e3 100% Sn Plated 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) Revised 4/18/95 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) 13.41 (.528) 13.51(.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 0.40 (.016) 1.016(.040) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 2.87 (.113) 3.12 (.123) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters (Inches) Gate Drai n Source 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs. } Source Drai n Gate Dimensions in Millimeters (Inches) 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated 050-7144 Rev F 3-2012 3.50 (.138) 3.81 (.150)